Abstract
The authors have deposited hydrogenated amorphous carbon films (a-C:H) on quartz and p type silicon substrates (100) by pulsed laser deposition (PLD) using a mixture of graphite and camphor powders at room temperature. The presence of hydrogen in the a-C:H films has been revealed by fourier transform infrared spectroscopy (FTIR) measurement. The solar cell structure of a-C:H/p-Si was also fabricated. The formation of a heterojunction between the a-C:H films and silicon substrate was confirmed by the current–voltage (I–V) measurement in the dark and under illumination conditions. The structure of a-C:H/p-Si showed photovoltaic characteristics with an open circuit voltage Voc of 400 mV and short circuit current density Jsc of ∼15 mA cm−2 under illumination [air mass (AM) 1·5, 100 mW cm−2, 25°C]. From the calculation, the energy conversion efficiency and fill factor were found to be approximately 2·1% and 0·38 respectively. The carbon layer is contributed to the energy conversion efficiency, which was proved by the measurement of quantum efficiency.
Get full access to this article
View all access options for this article.
