Abstract
Pulsed laser deposition is a technique that is capable of producing high quality multicomponent films under a broad range of ambient conditions. This technique has been widely used to grow thin films of numerous compounds. In particular, it enables the growth of films in reactive environments such as oxygen and nitrogen. Pulsed laser deposition of novel oxides such as cerium oxide (CeO2), Gd doped cerium oxide (GDC) and La–Sr–Ga–Mg–O (LSGM) on (111) Si, (100) MgO, (100) YSZ and (012) sapphire substrates is demonstrated. A systematic study on the influence of the substrate temperature and substrate orientation on the growth characteristics of these oxides is reported.
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