III-Nitrides are materials that have revolutionised the lighting industry allowing for the development of high brightness and efficiency white light emitting diodes (LEDs), enabling cost and energy savings at an unprecedented scale. However, there remain several obstacles to the further enhancement of the efficiency of LEDs, particularly for emission at longer wavelengths. The existence of polarisation fields as an inherent property of wurtzite III-nitride materials severely hampers LED performance. The origin of these fields due to the deviation from an ideal tetrahedral bonding structure and their relation to strain has been addressed in this review. The effect of the polarisation fields on the band structure of heterostructure quantum wells, known as the quantum confined stark effect, and its implications for the efficiency and spectral stability of LEDs have also been reviewed. Finally, the effectiveness and viability of several proposed methods of mitigating the harmful effects of the polarisation fields, such as the growth of III-nitrides on alternative planes, doping, strain engineering and growth of cubic GaN, have been addressed.
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InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2’
bulk GaN substrate’
bulk GaN substrates’
surfaces: group-III adlayers and indium incorporation’
and 
multiple-quantum-well light-emitting diodes’
blue-green InGaN/GaN light-emitting diodes’
GaN substrates’
InGaN/GaN light emitting diodes with various wavelengths’
InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth’
single-quantum-well blue light-emitting diodes, Appl’
blue light-emitting diodes’