Fabrication of SiC p /Cu–Al electronic packaging material by pressureless infiltration method

Abstract

The SiC_p/Cu–Al composites with 72·7 vol.-%SiC particles were prepared by pressureless infiltration, and Cu coated SiC particles (SiC/Cu composite powder) were used as reinforcements for aluminium matrix. The effects of moulding pressure, infiltration temperature and infiltration time on the infiltration depth were studied by orthogonal test. The morphology and phase structure of the composites were analysed by scanning electron microscopy and X-ray diffraction. The results show that under moulding pressure of 10 MPa, infiltration temperature of 850°C and infiltration time of 3 h conditions, the SiC_p/Cu–Al composite structure is uniform and dense without obvious porosity defects, and the thermal expansion coefficient is close to thermal expansion coefficient of the Turner model.