Solid liquid interdiffusion technique is employed to attach N type Bi2(Te0·92Se0·08)3 thermoelectric material to alumina substrate. The surface finishes of the bonding surfaces for Bi2(Te0·92Se0·08)3 and alumina are Ni and Ag respectively. The bonding layer is pure Sn. The growth kinetic of intermetallic compounds and their microstructure evolution during aging at 200°C was established. The success of this bonding technique provides a cost effective way to assemble thermoelectric modules at a low temperature for higher temperature applications.
SnyderGJ: ‘Application of the compatibility factor to the design of segmented and cascaded thermoelectric generators’, Appl. Phys. Lett., 2004, 84, 2436–2438.
MadhavaramR, SanderJ, GanYX, MasiulaniecCK: ‘Thermoelectric property of PbTe coating on copper and nickel’, Mater. Chem. Phys., 2009, 118, 165–173.
7.
MinG, RoweDM: ‘Cooling performance of integrated thermoelectric microcooler’, Solid State Electron., 1999, 43, 923–929.
8.
LiaoCN, LeeCH, ChenWJ: ‘Effect of interfacial compound formation on contact resistivity of soldered junctions between bismuth telluride-based thermoelements and copper’, Electrochem. Solid-State Lett., 2007, 10, 23–25.
9.
LiaoCN, HuangYC: ‘Effect of Ag addition in Sn on growth of SnTe compound during reaction between molten solder and tellurium’, J. Mater. Res., 2010, 25, 391–395.
10.
LiaoCN, LeeCH: ‘Suppression of vigorous liquid Sn/Te reactions by Sn–Cu solder alloys’, J. Mater. Res., 2008, 23, 3303–3308.
11.
LiaoCN, WuHN, ChenPC, YehJW: ‘Effect of antimony doping on thermoelectric properties of Zr0·5Ti0·5NiSn multi-element alloys’, Ann. Chim., 2006, 31, 711–722.
12.
GanYX, DynysFW: ‘Joining highly conductive and oxidation resistant silver-based electrode materials to silicon for high temperature thermoelectric energy conversions’, Mater. Chem. Phys., 2012, 138, 342–349.
13.
KisielR, SzczepanskiZ: ‘Die-attachment solutions for SiC power devices’, Microelectron. Reliab., 2009, 49, 627–629.
14.
El-GenkMS, SaberHH, CaillatT: ‘Efficient segmented thermoelectric unicouples for space power applications’, Energy Convers. Manag., 2003, 44, 1755–1772.
15.
SinghA, BhattacharyaS, ThinaharanC, AswalDK, GuptaSK, YakhmiJV, BhanumurthyK: ‘Development of low resistance electrical contacts for thermoelectric devices based on n-type PbTe and p-type TAGS-85 ((AgSbTe2)0·15(GeTe)0·85)’, J. Phys. D: Appl. Phys., 2009, 42, 015502.
ShirzadiAA, AssadiH, WallachER: ‘Interface evolution and bond strength when diffusion bonding materials with stable oxide films’, Surf. Interf. Anal., 2011, 31, 609–618.
18.
ZhaoDG, LiXY, JiangW, ChenLD: ‘Interfacial evolution behavior and reliability evaluation of CoSb3/Ti/Mo-Cu thermoelectric joints during accelerated thermal aging’, J. Alloy. Compd, 2009, 477, 425–431.
19.
ChuangHY, YangTL, KuoMS, ChenYJ, YuJJ, LiCC, KaoCR: ‘Critical concerns in soldering reactions arising from space confinement in 3-D IC packages’, IEEE Trans. Device Mater. Rel., 2012, 12, 233–240.
20.
MundingA, HubnerH, KaiserA, PenkaS, BenkartP, KohnE:‘Cu/Sn solid–liquid interdiffusion bonding’in ‘Wafer level 3-D ICs process technology’(
TanC S, ), 131–169; 2008, New York, Springer.
21.
LinWP, WangPJ, LeeCC: ‘Bonding/barrier layers on bismuth telluride (Bi2Te3) for high temperature applications’, Proc. 60th Int. Conf. on ‘Electronic Components and Technology’, Las Vegas, USA, June 2010, Paris Las Vegas, 447– 450.
22.
ChuangHY, YuJJ, KuoMS, TongHM, KaoCR: ‘Elimination of voids in reactions between Ni and Sn: a novel effect of silver’, Scr. Mater., 2012, 66, 171–174.
23.
ChenCM, ChenSW: ‘Electromigration effect upon the Sn/Ag and Sn/Ni interfacial reactions at various temperatures’, Acta Mater., 2002, 50, 2461–2469.
24.
SuzukiK, KanoS, KajiharaM, KurokawaN, SakamotoK: ‘Reactive Diffusion between Ag and Sn at Solid State Temperatures’, Mater. Trans., 2005, 46, 969–973.
