Dielectric behaviour of valence compensated system Ba 1-x La x Sn 1-x Ni x O 3

Abstract

Compositions in the system Ba_1-x La_x Sn_1-x Ni_xO₃ up to x ≤ 0·30 were prepared by solid state sintering, and the dielectric behaviour of single phase solid solutions studied. It has been found that solid solutions form for compositions with x ≤ 0·15, the structure remaining cubic, similar to BaSnO₃. The grain size of all the sintered compositions was almost the same as that for BaSnO₃, i.e. 2–3 μm. Dielectric relaxation in these materials is explained on the basis of the reorientation of dipoles due to hopping of electrons among Ni²⁺ and Ni³⁺ ions.