The growth kinetics, morphologies, and structures of nickel silicide layers have been studied by gravimetric analysis, X-ray diffraction analysis, microprobe analysis, and optical microscopy and scanning electron microscopy. The layers were produced by the hydrogen reduction of silicon tetrachloride at 1023, 1173, 1273, and 1373K in the vicinity of a nickel substrate with the concomitant diffusion interaction of the nickel and silicon.
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