Growth of SiCN films by magnetron sputtering

Abstract

If β-Si₃ N₄ and β-C₃ N₄ have the same structure they might be expected to be mutually miscible, giving rise to silicon carbon nitride (SiCN), which has potential industrial applications. SiCN films were deposited onto Si (100) substrates by unbalanced magnetron sputtering. Reactive deposition was performed using graphite and silicon targets in an argon–nitrogen plasma. The growth kinetics of the films are discussed. The films were characterised by X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and scanning electron microscopy. The N₂ fraction in the gas mixture has a major influence on the deposition rate and composition of the films: a high N₂ fraction results in increased deposition rate and N/(C + Si) and C/(N + Si) ratios. The SiCN films are mainly amorphous. XPS and FTIR spectra show the existence of Si–N, C–N single, C=N double, and C≡N triple bonds. Almost no Si–C bonding is found in the films.