Abstract
Based on the theory established in Part I, an axisymmetric computational model for liquid phase electroepitaxial growth of ternary semiconductor crystals is developed in this part. The model accounts for mass diffusion and electromigration in the liquid phase, Joule heating and mass diffusion in the solid phase, and Peltier cooling, phase equilibrium and mass conservation at the growth interface. The finite element method is used to solve the governing equations of the model. Numerical simulations are carried out for LPEE growth of AlGaAs crystals. A detailed analysis for the relative contributions of diffusion and electromigration to the growth rate and crystal composition is presented. The computed results are consistent with experimental observations.
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