A continuum model for the liquid phase electroepitaxial (LPEE) growth process of ternary alloy semiconductors is presented. The fundamental equations are obtained from the basic principles of electrodynamics and thermomechanics of continua. The constitutive equations for the liquid and solid phases are derived from the principles of a rational thermodynamic theory. The associated interface and boundary conditions are also presented. As a special case, the resulting field equations are specialized through systematic simplifications for an axisymmetric growth cell configuration used to grow AlGaAs.
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