We propose a new mathematical model for simulating a semiconductor device. The model is formulated based on a discretization method using a Voronoi-Delaunay (VD) diagram. The fact that the VD diagram consists of two mesh systems, independent but geometrically orthogonal to each other, leads to two completely different sets of formulae. We apply the method to a conventional MOSFET DC analysis as an initial test example. We found that the new method provides similar results compared to a conventional one. This confirmed the validity of our new formulation.
Get full access to this article
View all access options for this article.
References
1.
WadaT. and DangR., Development and application of a high-speed 2-dimensional time dependent device simulation (MOS2C), NASECODE-4 (1985) 108–119.
2.
EnglW., DirksH.K. and MeinerzhagenB., Device modeling, Proc. IEEE, vol. 71 (1967) 149–172.
3.
RaffertyC.S., PintoM.R. and DuttonR.W., Iterative methods in semiconductor device simulation, IEEE Trans. Electron Devices, vol. ED-32 (1983) 10–33.
4.
PennmanJ. and FraserJ.R., Complementary and dual energy finite element principles in magnetostatics, IEEE Trans., Magn.Mag-18 (1982) 319–324.
5.
HammondP. and PennmanJ., Calculations of inductance and capacitance by means of dual energy principles, Proc. IEEE, vol. 123 (1976) 554–559.
6.
SaitoY., KishinoY., HayanoS., NakamuraH., TsuyaN. and CendesZ.J., Faster magnetic field computation using locally orthogonal discretization, IEEE Trans., Magn.Mag-22 (1986) 1057–1059.
7.
KojimaT., SaitoY. and DangR., Dual mesh appoach for semiconductor device simulator, IEEE Trans., Magn.Mag-25 (1988) 2953–2955.
8.
GummelH.K., Self-consistent iterative scheme for one-dimensional steady state transistor calculations, IEEE Trans. Electron Devices, ED-11 (1964) 455–465.
9.
ScharfetterD.L. and GummelH.K., Large-signal analysis of silicon read diode oscilator, IEEE Trans., Electron Devices, E/D-16 (1969) 16–74.
