This paper describes fabrication and electrical properties of a novel p-type organic semiconductor Sulphur-Doped Quantum/Graphene-Oxide (SGQD/GO) Composite Material. Static and dynamic behaviour of all p-organic sequential circuits in ZVLL configurations, using SGQD/GO based Dual gate (DG) OTFT is studied. Dual gate organic transistor outperforms single gate organic transistor in terms of Ids, µeff, Vt, Ion/Ioff, SS and gm. D flip-flop and J-K flip-flop are also implemented with the DG structure. A higher output voltage swing for both type of flip-flop circuits is obtained using the dual gate structure of the OTFT device in ZVLL configuration. It unveils the fact that DG devices have better gate control, higher gain and produce greater voltage swings. Also, mobility enhancement in DG devices speeds up the circuit performance and increases the capability to work at higher clock rate. Lower propagation delays of 0.6 ms and 1.1 ms are reported for D Flip-Flop and J-K Flip-Flop respectively.
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