Abstract
Schottky barrier diodes have been fabricated using doped polyaniline as the semiconductor and aluminium as the metal. Polyaniline was doped with H2SiF6 acid at room temperature to form a p-type semiconductor. On a sandwich-type device, the junction at Au/polyaniline/Au showed ohmic characteristics, while the junction at Al/polyaniline/Au gave rectifying behaviour. Electrical characterization has been carried out and electronic parameters, including the barrier height and ideality factor as a function of temperature and acid concentrations, have been determined. Optical absorption spectroscopy was also used to determine any acid-doping effect.
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