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Abstract

Photo initiated cross linking of epoxides is very promising from the viewpoint of application to photocurable coating and photoresist. Although amines are known to be useful as crosslinkers for epoxides, only a few studies on the photoinitiated formation of amines are reported. This work describes the synthesis and characterization of copolymer comprised of one sort of material to induce water solubility such as N,N ^'-dimethyl acrylamide (DMAC); and another material to give the photoactive response such as glycidyl methacrylate (GMA). Various copolymers were prepared by free-radical solution polymerization typically in chloroform and azobisisobutyronitrile (AIBN) as initiator at 60—63^°C. Photocrosslinking reaction was induced using bis (4-formylaminophenyl) methane (FAPM) as a photobase generator. It was found that poor image pattern profile has been obtained after exposure to UV radiation with λ _max = 250 and 420 nm.

Keywords

Photobase generator glycidyl methacrylate copolymers photoresist water soluble lithography

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References

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Brainard, R. , Barclay, G. , Anderson , E. , and Ocola, L. (2002). Resists for Next Generation Lithography , Microelectron. Engng , 61: 707—715 .

Photocuring Reaction of Poly(Glycidyl Methacrylate-Co-N,N'-Dimethyl Acrylamide) using Photogenerated Amine from Bis(4-Formyl Aminophenyl ) Methane for Photoresist Applications

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