A micro-porous TiO2 layer was synthesized on Ti sheet (Ti-MAO) using the micro-arc oxidation (MAO) technique. In this paper, the direct ultrasonic-assisted active soldering technology is applied and its feasibility for the Ti-MAO/substrate (Si wafer, sapphire) bonding is investigated for In49Sn0.5Lu active solder (IS) for 30 s at 150°C in air. The results show that the joints were nearly void-free. the Lu migrated to the solder/substrate interface, reacted with the substrate and formed a thin Lu-rich transition layer. According to thermodynamics calculations, the Gibbs free energy value of LuO2 is one order of magnitude more negative than the substrate (TiO2 and sapphire). The shear strength of both Ti-MAO/IS/Si and Ti-MAO/IS/sapphire joint were 3.17 ± 0.57 MPa and 4.87 ± 0.61 MPa, respectively.
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