The simulation of semiconductor devices is a powerful means for optimizing the performance of semiconduc tor circuits and devices. various classes of semi conductor models exist, but accurate simulations re quire exact ("total") computer models. The exact models allow the use of arbitrary initial conditions and internal distributions and describe the device accurately over wide ranges of operation.
This article discusses the leading numerical formula tions used to generate exact semiconductor models and describes the simulation of an NP junction, a bipolar transistor, and a MOS field effect transistor using exact models.
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