A basic consideration of the variation, with collector-emitter voltage, of the minority carrier charge in the emitter as well as the base region of a bipolar junction transistor facilitates a didactic treatment of the dependence of low frequency collector output resistance on aspects of device structure and modelling, and base-emitter circuit drive conditions.
HartB. L.‘D.C.-parameter characterisation of the Early effect in bipolar junction transistors’The Radio and Electronic Engineer, 50, No. 1/2, pp. 79–89 (Jan/Feb. 1980).
