By modifying the high-frequency hybrid-pi model and using an interactive circuit analysis program, a linear U.H.F., transistor model has been derived. Models were obtained for two types of transistors and the S-parameters predicted by these models were in good agreement with measurements.
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References
1.
CookeH. F., ‘Microwave transistor – theory and design’, Proc. I.E.E.E., 59, No. 8, pp. 1163–1181 (Aug. 1971).
2.
HartmannK., ‘Computer-aided determination of the small-signal equivalent network of a bipolar microwave transistor’, I.E.E.E. Trans, Microwave Theory and Techniques, MTT-20, No. 2, pp. 120–126 (Feb. 1972).
HughesE., ‘Equivalent circuit modelling of small-signal microwave bipolar transistors’, Proceedings of one-day meeting on microwave transistors, Imperial College, London (13 December 1972).
5.
I.C.A.P., ‘Interactive Circuit Analysis Program’ Subroutine on Honeywell DDP516 computer, Department of Electronics, Univ. of Southampton, England.
6.
OllinsR. I.RatnerS. J., ‘Computer-aided design and optimization of a broadband high frequency monolithic amplifier’, I.E.E.E. J. Solid-State Circuits, SSC-7, No. 6, pp. 487–492 (Dec. 1972).
