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Abstract

Six kinds of end-capped thermosetting copolyimides were prepared and applied as a junction coating resin for protection of semiconductor devices. The copolyimides are composed of aromatic dianhydrides, aromatic diamines, bis(γ-aminopropyl)tetramethyldisiloxane and reactive end-capping agents. Maleic anhydride and γ-aminopropyltrimethoxysilane were used as the reactive end-groups due to increasing their crosslinking reactivity. The copolyimides were cured at 200 °C, then the thermal and mechanical properties of the hardened copolyimides were characterized. The thermosetting copolyimides exhibited good adherence to a silicon wafer and an encapsulant without an adhesion promoter due to their incorporated disiloxane composition. The residual interface stress between the copolyimides and a silicon wafer was 3.5–3.6 MPa. The copolyimides were applied as a junction coating for protection of a semiconductor device and exhibited good reliability.

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Application of Thermosetting Copolyimides as Coatings for Protection of Semiconductor Devices

Abstract

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