Abstract
X-ray photoelectron spectroscopy has been performed in photoluminescent porous Si layers after different treatments, namely, anodisation only in a HF-ethanol solution, rinsing in deionised water, ethanol immersion, and exposure to ambient conditions. The spectra recorded just after formation in the HF solution are the most representative of real porous Si layer structures. However, the pretreatment in water, exposure to ambient conditions for a long period, and immersion in ethanol degrades the porous Si layer surface to a greater or lesser extent. The growth of different oxide phases and the amorphisation of the structures after the pretreatments are also discussed.
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