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Abstract

Transmission electron microscopy was used to study Si/SiO₂ interfaces in Pt doped fast rectifiers. Orthorhombic PtSi (monocrystalline) precipitates at the n⁺-Si/SiO₂ and p⁺-Si/SiO₂ interfaces were observed. This precipitation can be related to the presence of dislocations induced by the P or B doping (networks parallel to the surface) and to SiP precipitates. Two epitaxial relationships were observedfor the PtSi precipitation: (010) PtSi || {111} Si and (001) PtSi || {110} Si. Different Pt diffusion temperatures and cooling rates were used and it was shown that the reverse recovery time is influenced by the diffusion temperature, whereas the gettering efficiency and the occurrence of soft breakdown are reduced by slow cooling.

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Platinum gettering in silicon: Precipitation of PtSi on diffusion induced dislocations and on SiP precipitates

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