Platinum gettering in silicon: Precipitation of PtSi on diffusion induced dislocations and on SiP precipitates

Abstract

Transmission electron microscopy was used to study Si/SiO₂ interfaces in Pt doped fast rectifiers. Orthorhombic PtSi (monocrystalline) precipitates at the n⁺-Si/SiO₂ and p⁺-Si/SiO₂ interfaces were observed. This precipitation can be related to the presence of dislocations induced by the P or B doping (networks parallel to the surface) and to SiP precipitates. Two epitaxial relationships were observedfor the PtSi precipitation: (010) PtSi || {111} Si and (001) PtSi || {110} Si. Different Pt diffusion temperatures and cooling rates were used and it was shown that the reverse recovery time is influenced by the diffusion temperature, whereas the gettering efficiency and the occurrence of soft breakdown are reduced by slow cooling.

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References

J. L. MAURICE and C. COLLIEX: Appl. Phys. Lett., 1989, 2, 55.

A. CORREIA, D. BALLUTAUD, and J. L. MAURICE: J. Appl. Phys., to be published.

K. GRAFF : Mater. Sci. Eng., 1989, B4, 63.

H. R. HUFF: Solid State Technol., 1983, 26, 211.

W. SCHRÖTER, M. SEIBT, and D. GILLES: in ‘Material science and technology’, Vol. 4, (ed. R. W. Cahn et al.), 539; 1991, Weinheim/New York, UCH.

M. D. de COTEAU, P. R. WILSHAW, and R. FALSTER: Inst. Phys. Conf. Ser., 1991, 117, 231.

C. T. HO and F. V. WALD: Phys. Status Solidi (a), 1981, 67, 103.

A. CORREIA, D. BALLUTAUD, and J. L. MAURICE: Jpn J. Appl. Phys., 1994, 33, 1217.

D. LECROSNIER, J. PAUSAM, G. PELOUS, F. RICHOU, and M. SALVI: J. Appl. Phys., 1981, 52, 5090.

10.

D. K. SADANA: in MRS Symp. Proc. ‘Impurity diffusion and gettering in silicon’, Vol. 36, (ed. R. B. Fair et al.), 246; 1985, Pittsburgh, PA, Materials Research Society.

11.

NI. SEIBT: in MRS Symp. Proc. ‘Defect engineering in semiconductor growth, processing and device technology’, Vol. 262, 957; 1992, Pittsburgh, PA, Materials Research Society.

12.

P. PONGRATZ, G. LIEDL, and G. STINGEDER: Inst. Phys. Conf. Ser., 1989, 100, 513.

13.

A. OURMAZD and W. SCHROTER: Appl. Phys. Lett., 1984, 45, 781.

14.

B. LAURENT, B. PICHAUD, A. LHORTE, and J. B. QUOIRIN: Inst. Phys. Conf. Ser., 1993, 134, 195.

15.

M. CONTI and A. PANCHIHIERI: Alta Frequenza, 1971, XL, 3444.

16.

Y. C. KAO and J. R. DEWIS: IEEE Trans. Electron Devices, 1970, ED–17, 9.

17.

B. LAURENT, B. PICHAUD, A. LHORTE, and J. B. QUOIRIN: Solid State Phenom., 1994, 37-38, 1994.

18.

R. W. G. WYCKOFF: in ‘Crystal structures’, Vol. 1, Chap. 3, 16; 1963, New York, Wiley-Interscience.

19.

X. J. NING and P. PIROUZ: Inst. Phys. Conf. Ser., 1991, 117, 205.

20.

T. MOUDA-AZZEM and A. GERVAIS: J. Cryst. Growth, 1987, 83, 105.

21.

J. H. SWUTTICE and H. J. QUEISSER: J. Appl. Phys., 1962, 33, 1540.

22.

I. M. SILCOCK and W. J. TUNSTALL: Philos. Mag., 1964, 10, 361.

23.

M. SEIBT and W. SCHMTER: Solid State Phenom., 1991, 19-20, 283.

24.

U. GOSELE, W. FRANK, and A. SEEGER: Appl. Phys., 1980, 23, 361.

25.

F. C. FRANK and D. TURNBULL: Phys. Rev., 1956, 104, 617.

26.

A. K. SINHA, R. B. MARCUS, T. T. SHENG, and S. E. HASZKO: J. Appl. Phys., 1972, 43, 3637.

27.

J. R. CHEN, T. S. HEH, and M. P. LIN: Surf. Sci., 1985, 162, 657.

28.

R. M. ANDERSON and T. M. REITH: J. Electrochem. Soc., 1975, 122, 1337.