Phenylated Group 13/15 Compounds: Convenient Precursors to Phase Pure Gallium Arsenide and Gallium Phosphide

Abstract

The phenylated group 13/15 compounds, Ph₂MEPh₂ (M = Ga and In; E = P and As), were prepared from the reaction of Ph₃M (M = Ga and In) with Ph₂EH (E = P and As) in 73–83% yield. Pyrolysis of Ph₂GaAsPh₂ and Ph₂GaPPh₂ at 450°C produced crystalline GaAs and GaP, which were characterized by x-ray powder diffraction. The effect of temperature on the synthesis of GaAs and GaP was investigated. Phenyl-group migration is the dominant reaction pathway en route to GaAs and GaP.