Thermoelectric (TE) technology enables direct conversion between thermal and electrical energies and thus has been regarded as an alternative for energy harvesting and refrigeration. Bismuth telluride (Bi2Te3) is the most widely used TE material at room temperature due to its high figure of merit (∼1). Since the first publication on the electrodeposition of Bi2Te3 films in 1994, a large number of publications has emerged in the last two decades, owing to its advantages such as simple and safe preparation, high deposition rate, convenient micromachining, good compatibility to semiconductor microfabrication techniques and so on. This article reviews the recent research progress in the electrodeposition of Bi2Te3 and its application in TE devices. Additionally, an outlook towards the future development of this area has also been discussed.
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References
1.
KaurKKumarSBaliyanA.5G: a new era of wireless communication. Int J Inf Tech. 2020;12:619–624. doi:10.1007/s41870-018-0197-x
KishoreRANozariasbmarzAPoudelBet al.Ultra-high performance wearable thermoelectric coolers with less materials. Nat Commun. 2019;10:1–13. doi:10.1038/s41467-019-09707-8
4.
WangYYangLShiXLet al.Flexible thermoelectric materials and generators: challenges and innovations. Adv Mater. 2019;31:1807916. doi:10.1002/adma.201807916
5.
MaYAhlbergESunYet al.Thermoelectric properties of thin films of bismuth telluride electrochemically deposited on stainless steel substrates. Electrochim Acta. 2011;56:4216–4223. doi:10.1016/j.electacta.2011.01.093
6.
WuMBinnemansKFransaerJ.Electrodeposition of antimony from chloride-free ethylene glycol solutions and fabrication of thermoelectric Bi2Te3/(Bi1–xSbx)2Te3 multilayers using pulsed potential electrodeposition. Electrochim Acta. 2014;147:451–459. doi:10.1016/j.electacta.2014.08.111
WittingITChasapisTCRicciFet al.The thermoelectric properties of bismuth telluride. Adv Electron Mater. 2019;5:1800904. doi:10.1002/aelm.201800904
10.
HaoFQiuPTangYet al.High efficiency Bi2Te3-based materials and devices for thermoelectric power generation between 100 and 300 degrees C. Energy Environ Sci. 2016;9:3120–3127. doi:10.1039/c6ee02017h
11.
RenZTaskinAASasakiSet al.Optimizing Bi(2–x)SbxTe(3–y)Sey solid solutions to approach the intrinsic topological insulator regime. Phys Rev. 2011;84:1615311.1–1165311.6. doi:10.1103/PhysRevB.84.165311
12.
ManzanoCVAbadBMuñoz RojoMet al.Anisotropic effects on the thermoelectric properties of highly oriented electrodeposited Bi2Te3 films. Sci. Rep. 2016;6:19129–19136. doi:10.1038/srep19129
13.
MamurHBhuiyanMRAKorkmazFet al.A review on bismuth telluride (Bi2Te3) nanostructure for thermoelectric applications. Renew Sust Energy Rev. 2018;82:4159–4169. doi:10.1016/j.rser.2017.10.112
14.
DelvesRTBowleyAEHazeldenDWet al.Anisotropy of the electrical conductivity in bismuth telluride. Proc Phys Soc. 1961;78:838–844. doi:10.1088/0370-1328/78/5/329
15.
GoldsmidHJ.The thermal conductivity of bismuth telluride. Proc Phys Soc B. 1956;69:203.
16.
NaJKimYParkTet al.Preparation of bismuth telluride films with high thermoelectric power factor. ACS Appl Mater Inter. 2016;8:32392–32400. doi:10.1021/acsami.6b10188
17.
MaYZhangDPengZet al.Delivery of platinum(iv) prodrugs via Bi2Te3 nanoparticles for photothermal–chemotherapy and photothermal/photoacoustic imaging. Mol Pharmaceut. 2020;17:3403–3411. doi:10.1021/acs.molpharmaceut.0c00458
18.
WadaKTomitaKTakashiriM.Fabrication of bismuth telluride nanoplates via solvothermal synthesis using different alkalis and nanoplate thin films by printing method. J Cryst Growth. 2016;468:194–198. doi:10.1016/j.jcrysgro.2016.12.048
19.
HosokawaYWadaKTanakaMet al.Thermal annealing effect on structural and thermoelectric properties of hexagonal Bi2Te3 nanoplate thin films by drop-casting technique. Jpn J Appl Phys. 2018;57:02CC02. doi:10.7567/JJAP.57.02CC02
20.
MoriRMayuzumiYYamaguchiMet al.Improved thermoelectric properties of solvothermally synthesized Bi2Te3 nanoplate films with homogeneous interconnections using Bi2Te3 electrodeposited layers. J Alloy Compd. 2020;818:152901. doi:10.1016/j.jallcom.2019.152901
21.
ShiTFChenMRLiuZGet al.A Bi2Te3-filled nickel foam film with exceptional flexibility and thermoelectric performance. Nanomater Basel. 2022;12:1693. doi:10.3390/nano12101693
22.
LuYKnize RJ.Modified laser ablation process for nanostructured thermoelectric nanomaterial fabrication. Appl Surf Sci. 2007;254:1211–1214. doi:10.1016/j.apsusc.2007.06.040
23.
WudilYSGondalMARaoSGet al.Substrate temperature-dependent thermoelectric figure of merit of nanocrystalline Bi2Te3 and Bi2Te2.7Se0.3 prepared using pulsed laser deposition supported by DFT study. Ceram Int. 2020;46:24162–24172. doi:10.1016/j.ceramint.2020.06.196
24.
FourmontPGerleinLFFortierFXet al.Highly efficient thermoelectric microgenerators using nearly room temperature pulsed laser deposition. ACS Appl Mater Inter. 2018;10:10194–10201. doi:10.1021/acsami.7b18852
25.
ChangHCChenTHWhangWTet al.Superassembling of Bi2Te3 hierarchical nanostructures for enhanced thermoelectric performance. J Mater Chem A. 2015;3:10459–10465. doi:10.1039/C5TA00911A
26.
ZhangHMomandJLevinskyJet al.Nanostructure and thermal power of highly-textured and single-crystal-like Bi2Te3 thin films. Nano Res. 2022;15:2382–2390. doi:10.1007/s12274-021-3743-y
27.
AhmadFSinghSPundirSKet al.Effect of doping and annealing on thermoelectric properties of bismuth telluride thin films. J Electron Mater. 2020;49:4195–4202. doi:10.1007/s11664-020-08126-6
28.
YangFZhengSWangHet al.A thin film thermoelectric device fabricated by a self-aligned shadow mask method. J Micromech Microeng. 2017;27:055005. doi:10.1088/1361-6439/aa64a3
29.
VieiraEMFFigueiraJPiresALet al.Enhanced thermoelectric properties of Sb2Te3 and Bi2Te3 films for flexible thermal sensors. J Alloy Compd. 2019;774:1102–1116. doi:10.1016/j.jallcom.2018.09.324
30.
SudarshanCJayakumarSVaidekiKet al.Effect of vacuum annealing on structural, electrical and thermal properties of e-beam evaporated Bi2Te3 thin films. Thin Solid Films. 2017;629:28–38. doi:10.1016/j.tsf.2017.03.043
31.
KimJKChoiJYBaeJMet al.Thermoelectric characteristics of n-type Bi2Te3 and p-type Sb2Te3 thin films prepared by co-evaporation and annealing for thermopile sensor applications. Mater Trans. 2013;54:618–625. doi:10.2320/matertrans.M2013010
32.
JitthamapiromPWanarattikanPNuthongkumPet al.Comparison of thermoelectric properties of flexible bismuth telluride thin films deposited via DC and RF magnetron sputtering. Ferroelectrics. 2019;552:64–72. doi:10.1080/00150193.2019.1653083
33.
KurokawaTMoriRNorimasaOet al.Influences of substrate types and heat treatment conditions on structural and thermoelectric properties of nanocrystalline Bi2Te3 thin films formed by dc magnetron sputtering. Vacuum. 2020;179:109535. doi:10.1016/j.vacuum.2020.109535
34.
TakayamaKTakashiriM.Multi-layered-stack thermoelectric generators using p-type Sb2Te3 and n-type Bi2Te3 thin films by radio-frequency magnetron sputtering. Vacuum. 2017;144:164–171. doi:10.1016/j.vacuum.2017.07.030
35.
TakahashiMKatouYNagataKet al.The composition and conductivity of electrodeposited Bi–Te alloy films. Thin Solid Films. 1994;240:70–72. doi:10.1016/0040-6090(94)90696-3
36.
NorimasaOTakashiriM.In-and cross-plane thermoelectric properties of oriented Bi2Te3 thin films electrodeposited on an insulating substrate for thermoelectric applications. J Alloy Compd. 2022;899:163317. doi:10.1016/j.jallcom.2021.163317
37.
PadmanathanNLalSGautamDet al.Amorphous framework in electrodeposited CuBiTe thermoelectric thin films with high room-temperature performance. ACS Appl Electron Mater. 2021;3:1794–1803. doi:10.1021/acsaelm.1c00063
38.
SuNGuoSLiFet al.Electrodeposition of Bi–Te thin films on silicon wafer and micro-column arrays on microporous glass template. Nanomaterials Basel. 2020;10:431–447. doi:10.3390/nano10030431
39.
TarancónA.Powering the IoT revolution with heat. Nat Electron. 2019;2:270–271. doi:10.1038/s41928-019-0276-4
40.
YuYZhuWKongXet al.Recent development and application of thin-film thermoelectric cooler. Front Chem Sci Eng. 2020;14:492–503. doi:10.1007/s11705-019-1829-9
41.
WuTKimJLimJHet al.Comprehensive review on thermoelectric electrodeposits: enhancing thermoelectric performance through nanoengineering. Front Chem. 2021;9:762896. doi:10.3389/fchem.2021.762896
42.
RostekRSteinNBoulangerC.A review of electroplating for V–VI thermoelectric films: from synthesis to device integration. J Mater Res. 2015;30:2518–2543. doi:10.1557/jmr.2015.203
43.
Martın-GonzálezMSPrietoALGronskyRet al.Insights into the electrodeposition of Bi2Te3. J Electrochem Soc. 2002;149:C546–C554. doi:10.1149/1.1509459
44.
JonJSRiWKSinKRet al.Derivation of limiting ion mobility equation based on the application of solvation effect-incorporated Poisson-Boltzmann equation. J Mol Liq. 2022;347:117988. doi:10.1016/j.molliq.2021.117988
45.
SchoenleberJSteinNBoulangerC.Influence of tartaric acid on diffusion coefficients of BiIII, SbIII, TeIV in aqueous medium: application of electrodeposition of thermoelectric films. J Electroanal Chem. 2014;724:111–117. doi:10.1016/j.jelechem.2014.04.004
46.
SonkarPKPrakashKYadavMet al.Co (II)-porphyrin-decorated carbon nanotubes as catalysts for oxygen reduction reactions: an approach for fuel cell improvement. J Mater Chem A. 2017;5:6263–6276. doi:10.1039/c6ta10482g
47.
LiFHJiaFLWangW.Studies of the electrochemical reduction processes of Bi3+, HTeO2+ and their mixtures. Appl Surf Sci. 2009;255:7394–7402. doi:10.1016/j.apsusc.2009.04.007
48.
JainAOngSPHautierGet al.The materials project: a materials genome approach to accelerating materials innovation. APL Mater. 2013;1:011002. doi:10.1063/1.4812323
49.
AllenJBGyörgyIFritzS.Electrochemical dictionary. Berlin: Springer Berlin Heidelberg; 2012. doi:10.1007/978-3-540-74598-3
50.
BoXTangADouMet al.Controllable electrodeposition and mechanism research of nanostructured Bi2Te3 thin films with high thermoelectric properties. Appl Surf Sci. 2019;486:65–71. doi:10.1016/j.apsusc.2019.04.194
51.
OhJWSeongYShinDSet al.Investigation and two-stage modeling of sintering behavior of nano/micro-bimodal powders. Powder Technol. 2019;352:42–52. doi:10.1016/j.powtec.2019.04.056
52.
ZhaoDLøvvikOMMarthinsenKet al.Segregation of Mg, Cu and their effects on the strength of Al Σ5 (210)[001] symmetrical tilt grain boundary. Acta Mater. 2018;145:235–246. doi:10.1016/j.actamat.2017.12.023
53.
LiMMaQZiWet al.Pt monolayer coating on complex network substrate with high catalytic activity for the hydrogen evolution reaction. Sci Adv. 2015;1:e1400268. doi:10.1126/sciadv.1400268
54.
SchaeferCKirkATAllersMet al.Ion mobility shift of isotopologues in a high kinetic energy ion mobility spectrometer (HiKE-IMS) at elevated effective temperatures. J Am Soc Mass Spectr. 2020;31:2093–2101. doi:10.1021/jasms.0c00220
55.
XuWCooperEIAngellCA.Ionic liquids: ion mobilities, glass temperatures, and fragilities. J Phy Chem B. 2003;107:6170–6178. doi:10.1021/jp0275894
56.
MirmahdiehSKhayamianTSarajiM.Analysis of dextromethorphan and pseudoephedrine in human plasma and urine samples using hollow fiber-based liquid–liquid–liquid microextraction and corona discharge ion mobility spectrometry. Microchim Acta. 2012;176:471–478. doi:10.1007/s00604-011-0743-8
57.
BorsdorfHMayerTZarejousheghaniMet al.Recent developments in ion mobility spectrometry. Appl Spectrosc Rev. 2011;46:472–521. doi:10.1080/05704928.2011.582658
58.
ManzanoCVAbadBMartín-GonzálezM.The effect of electrolyte impurities on the thermoelectric properties of electrodeposited Bi2Te3 films. J Electrochem Soc. 2018;165:D768–D773. doi:10.1149/2.1131814jes
59.
ChanTELeBeauJMVenkatasubramanianRet al.Carrier concentration modulation by hot pressing pressure in n-type nanostructured Bi(Se)Te alloy. Appl Phys Lett. 2013;103:144106–144110. doi:10.1063/1.4823801
60.
DouYZhuQDuYet al.Enhanced thermoelectric performance of Cu3SbSe4 doped with alkali-ion (Na and K). Electron Mater Lett. 2020;16:99–105. doi:10.1007/s13391-020-00198-0
61.
ShuaiJKimHSLanYet al.Study on thermoelectric performance by Na doping in nanostructured Mg1–xNaxAg0. 97Sb0. 99. Nano Energy. 2015;11:640–646. doi:10.1016/j.nanoen.2014.11.027
62.
KimYJZhaoLDKanatzidisMGet al.Analysis of nanoprecipitates in a Na-doped PbTe–SrTe thermoelectric material with a high figure of merit. ACS Appl Mater Interfaces. 2017;9:21791–21797. doi:10.1021/acsami.7b04098
63.
ZhuXGWenJWangGet al.Doping nature of Cu in epitaxial topological insulator Bi2Te3 thin films. Surf Sci. 2013;617:156–161. doi:10.1016/j.susc.2013.06.018
64.
GuoXZhangCLiuZet al.Multiple roles of unconventional heteroatom dopants in chalcogenide thermoelectrics: the influence of Nb on transport and defects in Bi2Te3. ACS Appl Mater Inter. 2021;13:13400–13409. doi:10.1021/acsami.1c00355
65.
IvanovOYaprintsevM.Mechanisms of thermoelectric efficiency enhancement in Lu-doped Bi2Te3. Mater Res Express. 2018;5:015905. doi:10.1088/2053-1591/aaa265
66.
GuoZSongKYanZet al.Broadening the optimum thermoelectric power generation range of p-type sintered Bi0. 4Sb1. 6Te3 by suppressing bipolar effect. Chem Eng J. 2021;426:131853. doi:10.1016/j.cej.2021.131853
67.
KulbachinskiĭVAKaminskiĭAYTarasovPMet al.Fermi surface and thermoelectric power of (Bi1–xSbx) 2Te3<Ag, Sn> mixed crystals. Phys Solid State+. 2006;48:833–840. doi:10.1134/S1063783406050040
68.
NiYZhangZNlebedimICet al.Ferromagnetism of magnetically doped topological insulators in CrxBi2–xTe3 thin films. J Appl Phys. 2015;117:17C748. doi:10.1063/1.4918560
69.
MagriPBoulangerCLecuireJM.Synthesis, properties and performances of electrodeposited bismuth telluride films. J Mater Chem C. 1996;6:773–779. doi:10.1039/JM9960600773
70.
KangWLiWChouWet al.Microstructure and thermoelectric properties of Bi2Te3 electrodeposits plated in nitric and hydrochloric acid baths. Thin Solid Films. 2017;623:90–97. doi:10.1016/j.tsf.2016.12.047
71.
KaoCHChenKLChiuYSet al.Comparison of NH3 and N2O plasma treatments on Bi2O3 sensing membranes applied in an electrolyte–insulator–semiconductor structure. Membranes. 2022;12:188. doi:10.3390/membranes12020188
72.
FranklinTC.Some mechanisms of action of additives in electrodeposition processes. Surf Coat Tech. 1987;30:415–428. doi:10.1016/0257-8972(87)90133-2
73.
HeoPHagiwaraKIchinoRet al.Electrodeposition and thermoelectric characterization of Bi2Te3. J Electrochem Soc. 2006;153:C213–C217.
74.
NguyenHPWuMSuJet al.Electrodeposition of bismuth telluride thermoelectric films from a nonaqueous electrolyte using ethylene glycol. Electrochim Acta. 2012;68:9–17. doi:10.1016/j.electacta.2012.01.091
75.
CicvarićKMengLNewbrookDWet al.Thermoelectric properties of bismuth telluride thin films electrodeposited from a nonaqueous solution. ACS Omega. 2020;5:14679–14688. doi:10.1021/acsomega.0c01284
76.
Martín-GonzálezMPrietoALKnoxMSet al.Electrodeposition of Bi1–xSbx films and 200-nm wire arrays from a nonaqueous solvent. Chem Mater. 2003;15:1676–1681. doi:10.1021/cm021027f
77.
XiaYZhuDSiSet al.Nickel foam-supported polyaniline cathode prepared with electrophoresis for improvement of rechargeable Zn battery performance. J Power Sources. 2015;283:125–131. doi:10.1016/j.jpowsour.2015.02.123
78.
AbellánMSchreblerRGómezH.Electrodeposition of Bi2Te3 thin films onto FTO substrates from DMSO solution. Int J Electrochem Sci. 2015;10:7409–7422.
79.
Van der WalS.Low viscosity organic modifiers in reversed-phase HPLC. Chromatographia. 1985;20:274–278. doi:10.1007/BF02310382
80.
KestinJSokolovMWakehamWA.Viscosity of liquid water in the range – 8°C to 150°C. J Phys Chem Ref Data. 1978;7:941–948. doi:10.1063/1.555581
81.
JaworskiAJBoltonGT.The design of an electrical capacitance tomography sensor for use with media of high dielectric permittivity. Meas Sci Technol. 2000;11:743–757. doi:10.1088/0957-0233/11/6/318
82.
WarashinaTHoshinoH.Solvent effects for spectroscopic properties of near-infrared absorbing nickel–dithiolene complex [Ni (iPr2timdt)2](iPr2timdt: monoanion of 1, 3-diisopropylimidazolidine-2, 4, 5-trithione). B Chem Soc Jpn. 2016;89:836–841. doi:10.1246/bcsj.20160060
83.
KrausCAFuossRM.Properties of electrolytic solutions. I. conductance as influenced by the dielectric constant of the solvent medium. J Am Chem Soc. 1933;55:21–36. doi:10.1021/ja01328a003
84.
WangPAnderkoA.Computation of dielectric constants of solvent mixtures and electrolyte solutions. Fluid Phase Equilibr. 2001;186:103–122. doi:10.1016/S0378-3812(01)00507-6
85.
JouybanASoltanpourSChanHK.A simple relationship between dielectric constant of mixed solvents with solvent composition and temperature. Int J Pharmaceut. 2004;269:353–360. doi:10.1016/j.ijpharm.2003.09.010
86.
CreagerS.Handbook of electrochemistry. Elsevier; 2007. doi:10.1016/B978-044451958-0.50004-5
87.
SaadMAAbdurahmanNHYunusRMet al.Surfactant for petroleum demulsification, structure, classification, and properties. A review. IOP Cof Ser Mater Sci Eng. 2020;991:012115. doi:10.1088/1757-899X/991/1/012115
88.
YooIJSongYLimDCet al.Thermoelectric characteristics of Sb2Te3 thin films formed via surfactant-assisted electrodeposition. J Mater Chem A. 2013;1:5430–5435. doi:10.1039/c3ta01631e
89.
KulsiCMitraMKarguptaKet al.Effect of different surfactants and thicknesses on electrodeposited films of bismuth telluride and its thermoelectric performance. Mater Res Express. 2015;2:106403–106413. doi:10.1088/2053-1591/2/10/106403
90.
NaylorAJKoukharenkoENandhakumarISet al.Surfactant-mediated electrodeposition of bismuth telluride films and its effect on microstructural properties. Langmuir. 2012;28:8296–8299. doi:10.1021/la301367m
91.
SongYYooIHeoNet al.Electrodeposition of thermoelectric Bi2Te3 thin films with added surfactant. Curr Appl Phys. 2015;15:261–264. doi:10.1016/j.cap.2014.12.004
92.
Caballero-CaleroODíaz-ChaoPAbadBet al.Improvement of bismuth telluride electrodeposited films by the addition of sodium lignosulfonate. Electrochim Acta. 2014;123:117–126. doi:10.1016/j.electacta.2013.12.185
93.
TakahashiMKojimaMSatoSet al.Electric and thermoelectric properties of electrodeposited bismuth telluride (Bi2Te3) films. J Appl Phys. 2004;96:5582–5587. doi:10.1063/1.1785834
94.
ChienHCYangCRLiaoLLet al.Thermal conductivity of thermoelectric thick films prepared by electrodeposition. Appl Therm Eng. 2013;51:75–83. doi:10.1016/j.applthermaleng.2012.09.004
95.
LiuPMitlinD.Emerging potassium metal anodes: perspectives on control of the electrochemical interfaces. Acc Chem Res. 2020;53:1161–1175. doi:10.1021/acs.accounts.0c00099
96.
KochR.The intrinsic stress of polycrystalline and epitaxial thin metal films. J Phys Condens Mat. 1994;6:9519–9550. doi:10.1088/0953-8984/6/45/005
97.
PengZHongY.Designer platinum nanoparticles: control of shape, composition in alloy, nanostructure and electrocatalytic property. Nano Today. 2009;4:143–164. doi:10.1016/j.nantod.2008.10.010
98.
RajamaniARJothiSDhinesh KumarMet al.Effects of additives on kinetics, morphologies and lead-sensing property of electrodeposited bismuth films. J Phys Chem C. 2016;120:22398–22406. doi:10.1021/acs.jpcc.6b06924
99.
LiuFWangBXingYet al.Effect of polyvinyl alcohol on the rheological properties of cement mortar. Molecules. 2020;25:754. doi:10.3390/molecules25030754
100.
BhandariAHearneSJSheldonBWet al.Microstructural origins of saccharin-induced stress reduction in electrodeposited Ni. J Electrochem Soc. 2009;156:D279–D282. doi:10.1149/1.3142363
101.
SaitouMOshiroSSagawaY.Scaling behavior of internal stress in electrodeposited nickel thin films. J Appl Phys. 2008;104:1231. doi:10.1063/1.3009336
102.
SenRDasSDasK.Influence of sodium saccharin on the microstructure of pulse electrodeposited Ni–CeO2 nanocomposite coating. J Nanosci Nanotechnol. 2012;12:7944–7949. doi:10.1166/jnn.2012.6654
103.
YuWVan ToanNLiYJet al.Morphological analysis and properties evaluation of electrodeposited thick BiSbTe films with cooperative interactions among multiple additives. J Electrochem Soc. 2021;168:22505–22513. doi:10.1149/1945-7111/abdd7b
104.
SaxenaMOkramGSLakhaniAet al.Enhanced thermoelectric performance of solution-grown Bi2Te3 nanorods. Mater Today Energy. 2021;21:100700. doi:10.1016/j.mtener.2021.100700
105.
KimWSAnoopGJeongISet al.Feasible tuning of barrier energy in PEDOT: PSS/Bi2Te3 nanowires-based thermoelectric nanocomposite thin films through polar solvent vapor annealing. Nano Energy. 2020;67:104207. doi:10.1016/j.nanoen.2019.104207
106.
ShiXLZouJChenZG.Advanced thermoelectric design: from materials and structures to devices. Chem Rev. 2020;120:7399–7515. doi:10.1021/acs.chemrev.0c00026
107.
MiyazakiYKajitaniT.Preparation of Bi2Te3 films by electrodeposition. J Cryst Growth. 2001;229:542–546. doi:10.1016/S0022-0248(01)01225-8
108.
ManzanoCVRojasAADecepidaMet al.Thermoelectric properties of Bi2Te3 films by constant and pulsed electrodeposition. J Solid State Electr. 2013;17:2071–2078. doi:10.1007/s10008-013-2066-7
109.
BurtonMRRichardsonSJStaniecPAet al.A novel route to nanostructured bismuth telluride films by electrodeposition. Electrochem Commun. 2017;76:71–74. doi:10.1016/j.elecom.2017.02.004
110.
ZhuTHuLZhaoXet al.New insights into intrinsic point defects in V2VI3 thermoelectric materials. Adv Sci. 2016;3:1600004. doi:10.1002/advs.201600004
111.
SatterthwaiteCBUreRW.Electrical and thermal properties of Bi2Te3. Phys Rev. 1957;108:1164–1170. doi:10.1103/PhysRev.108.1164
112.
YooIMyungNVLimDCet al.Electrodeposition of BixTey thin films for thermoelectric application. Thin Solid Films. 2013;546:48–52. doi:10.1016/j.tsf.2013.05.036
113.
MaLSZhangQZhaoQQet al.Synthesis and characterization of Bi2Te3/Te superlattice nanowire arrays. J Nanosci Nanotechnol. 2016;16:1207–1210. doi:10.1166/jnn.2016.10698
114.
LiWJYuWLYenCY.Pulsed electrodeposition of Bi2Te3 and Bi2Te3/Te nanowire arrays from a DMSO solution. Electrochim Acta. 2011;58:510–515. doi:10.1016/j.electacta.2011.09.075
115.
HorakJČermákKKoudelkaL.Energy formation of antisite defects in doped Sb2Te3 and Bi2Te3 crystals. J Phys Chem Solids. 1986;47:805–809. doi:10.1016/0022-3697(86)90010-7
116.
ZhangMLiuWZhangCet al.Evolution of atomic structure and electronic transport properties in n-type Bi2Te3 films via Bi2 planar defects. Appl Phys Lett. 2021;118:103901. doi:10.1063/5.0045518
117.
BakavetsAAniskevichYYakimenkoOet al.Pulse electrodeposited bismuth-tellurium superlattices with controllable bismuth content. J Power Sources. 2020;450:227605–227613. doi:10.1016/j.jpowsour.2019.227605
118.
MedlinDLEricksonKJLimmerSJet al.Dissociated 1/3 〈0111〉dislocations in Bi2Te3 and their relationship to seven-layer Bi3Te4 defects. J Mater Sci. 2014;49:3970–3979. doi:10.1007/s10853-014-8035-4
119.
GolgoviciFVisanT.Electrochemical deposition of BiTe films from choline chloride–malonic acid mixture as ionic liquid. Chalcogenide Lett. 2012;10:427–434.
120.
HirofumiEMikitoUToshiakiO.Electrodeposition of Sb, Bi, Te, and their alloys in AlCl3–NaCl–KCl molten salt. Electrochim Acta. 2007;53:100–105. doi:10.1016/j.electacta.2007.03.017
121.
YamaguchiMYamamuroHTakashiriM.Characteristics of electrodeposited bismuth telluride thin films with different crystal growth by adjusting electrolyte temperature and concentration. Curr Appl Phys. 2018;18:1513–1522. doi:10.1016/j.cap.2018.09.008
122.
LeeTLeeJWParkKTet al.Nanostructured inorganic chalcogenide-carbon nanotube yarn having a high thermoelectric power factor at low temperature. ACS Nano. 2021;15:13118–13128. doi:10.1021/acsnano.1c02508
123.
BandoHKoizumiKOikawaYet al.The time-dependent process of oxidation of the surface of Bi2Te3 studied by x-ray photoelectron spectroscopy. J Phys-Condens Mat. 2000;12:5607–5616. doi:10.1088/0953-8984/12/26/307
124.
AbdelnabiAALakhianVMcDermidJet al.The effect of powder pre-treatment on the mechanical and thermoelectric properties of spark plasma sintered N-type bismuth telluride. J Alloy Compd. 2021;874:159782. doi:10.1016/j.jallcom.2021.159782
125.
JungMJiMHanJHet al.Atomic layer deposition of ZnO layers on Bi2Te3 powders: comparison of gas fluidization and rotary reactors. Ceram Int. 2022. doi:10.1016/j.ceramint.2022.08.241
126.
SchultzJMMcHughJPTillerWA.Effects of heavy deformation and annealing on the electrical properties of Bi2Te3. J Appl Phys. 1962;33:2443–2450. doi:10.1063/1.1728990
127.
HorioYInoueA.Effect of oxygen content on thermoelectric properties of n-type (Bi,Sb)2(Te,Se)3 alloys prepared by rapid solidification and hot-pressing techniques. Mater Trans. 2006;47:1412–1416. doi:10.2320/matertrans.47.1412
128.
TakashiriMMakiokaTYamamuroH.Promotion of crystal growth in as-grown Bi2Te3 electrodeposited films without micro-pores using sputtered Bi2Te3 seed layers deposited on a glass substrate. J Alloy Compd. 2018;764:802–808. doi:10.1016/j.jallcom.2018.06.143
129.
MusicDChangKKSchmidtPet al.On atomic mechanisms governing the oxidation of Bi2Te3. J Phys: Condens Matter. 2017;29:485705. doi:10.1088/1361-648X/aa945f
130.
RashidMChungG.Effect of deposition conditions on the microstructure and the thermoelectric properties of galvanostatically electrodeposited Bi2Te3 film. Surf Rev Lett. 2013;20:1350044–1350052. doi:10.1142/S0218625X13500443
131.
SolimanHKashyoutAHB.Electrochemical deposition and optimization of thermoelectric nanostructured bismuth telluride thick films. Engineering. 2011;3:659–667. doi:10.4236/eng.2011.36079
SablaniSSGoosenMFAAl-BelushiRet al.Concentration polarization in ultrafiltration and reverse osmosis: a critical review. Desalination. 2001;141:269–289. doi:10.1016/S0011-9164(01)85005-0
134.
LiMAnandRK.Recent advancements in ion concentration polarization. Analyst. 2016;141:3496–3510. doi:10.1039/c6an00194g
135.
BuLWangWWangH.Effect of the substrate on the electrodeposition of Bi2Te3–ySey thin films. Mater Res Bull. 2008;43:1808–1813. doi:10.1016/j.materresbull.2007.07.002
136.
TittesKBundAPliethWet al.Electrochemical deposition of Bi2Te3 for thermoelectric microdevices. J Solid State Electr. 2003;7:714–723. doi:10.1007/s10008-003-0378-8
137.
WuMRamírezSAShafahianEet al.Electrodeposition of bismuth telluride thin films containing silica nanoparticles for thermoelectric applications. Electrochim Acta. 2017;253:554–562. doi:10.1016/j.electacta.2017.09.012
138.
ThoratJB.Surface deformation study of the electrodeposited nanostructured Bi2Te3 and Sb2Te3 thin films by double-exposure digital holographic interferometry. Phys Status Solidi A. 2019;216:1800661–1800672. doi:10.1002/pssa.201800661
139.
PatilPBMaliSSKondalkarVVet al.Morphologically controlled electrodeposition of fern shaped Bi2Te3 thin films for photoelectrochemical performance. J Electroanal Chem. 2015;758:178–190. doi:10.1016/j.jelechem.2015.09.019
140.
RashidMMChoKHChungG.Rapid thermal annealing effects on the microstructure and the thermoelectric properties of electrodeposited Bi2Te3 film. Appl Surf Sci. 2013;279:23–30. doi:10.1016/j.apsusc.2013.03.112
141.
NguyenTKeiSNguyenTet al.Synthesis and evaluation of thick films of electrochemically deposited Bi2Te3 and Sb2Te3 thermoelectric materials. Materials (Basel). 2017;10:154. doi:10.3390/ma10020154
142.
YamamuroHHatsutaNWachiMet al.Combination of electrodeposition and transfer processes for flexible thin-film thermoelectric generators. Coatings. 2018;8:22–31. doi:10.3390/coatings8010022
143.
ZhouAFuQZhangWet al.Enhancing the thermoelectric properties of the electroplated Bi2Te3 films by tuning the pulse off-to-on ratio. Electrochim Acta. 2015;178:217–224. doi:10.1016/j.electacta.2015.07.164
144.
Hernandez-FloresGPoggi-VaraldoHMSolorza-FeriaOet al.Tafel equation based model for the performance of a microbial fuel cell. Int J Hydrogen Energy. 2015;40:17421–17432. doi:10.1016/j.ijhydene.2015.06.119
145.
CorovićSPavlinMMiklavcicD.Analytical and numerical quantification and comparison of the local electric field in the tissue for different electrode configurations. Biomed Eng Online. 2007;6:37–37. doi:10.1186/1475-925X-6-37
146.
NegiASAnandSC.A textbook of physical chemistry. New Age International; 1985. doi:10.1016/B978-0-12-044262-1.X5001-4
147.
NguyenTHEnjuJOnoT.Enhancement of thermoelectric properties of bismuth telluride composite with gold nano-particles inclusions using electrochemical Co-deposition. J Electrochem Soc. 2019;166:D508–D513. doi:10.1149/2.1011912jes
148.
YooIJLimDCMyungNVet al.Electrical/thermoelectric characterization of electrodeposited Bix Sb2–xTe3 thin films. Electron Mater Lett. 2013;9:687–691. doi:10.1007/s13391-013-2246-8
149.
FrantzCSteinNGravierLet al.Electrodeposition and characterization of bismuth telluride nanowires. J Electron Mater. 2010;39:2043–2048. doi:10.1007/s11664-009-1001-2
SankaraP.Techniques for corrosion monitoring. Woodhead Publishing; 2008; doi:10.1533/9781845694050.1.49
152.
ConwayBEWilkinsonDP.Non-isothermal cell potentials and evaluation of entropies of ions and of activation for single electrode processes in non-aqueous media. Electrochim Acta. 1993;38:997–1013. doi:10.1016/0013-4686(93)87020-E
153.
ZhouJLinQHLiHYet al.Phosphorus-doped bismuth telluride films by electrodeposition. Mater Chem Phys. 2013;141:401–405. doi:10.1016/j.matchemphys.2013.05.033
154.
ZouZGCaiKFChenSet al.Pulsed electrodeposition and characterization of Bi2Te3–ySey film. Mater Res Bull. 2012;47:3292–3295. doi:10.1016/j.materresbull.2012.07.036
155.
AgapescuCCojocaruACotartaAet al.Electrodeposition of bismuth, tellurium, and bismuth telluride thin films from choline chloride–oxalic acid ionic liquid. J Appl Electrochem. 2013;43:309–321. doi:10.1007/s10800-012-0487-0
156.
ZhuWYangJYGaoXHet al.Growth of bismuth telluride thin film on Pt by electrochemical atomic layer epitaxy. Trans Nonferr Metal Soc. 2005;15:404–409.
157.
ZhouAJWangWHYaoXet al.Impact of the film thickness and substrate on the thermopower measurement of thermoelectric films by the potential-seebeck microprobe (PSM). Appl Therm Eng. 2016;107:552–559. doi:10.1016/j.applthermaleng.2016.05.037
158.
ReinsbergKGSchumacherCTempezAet al.Depth-profile analysis of thermoelectric layers on Si wafers by pulsed r.f. glow discharge time-of-flight mass spectrometry. Spectrochim Acta B. 2012;76:175–180. doi:10.1016/j.sab.2012.06.005
159.
CaoYZengZGLiuYLet al.Electrodeposition and thermoelectric characterization of (00L)-oriented Bi2Te3 thin films on silicon with seed layer. J Electrochem Soc. 2013;160:D565–D569. doi:10.1149/2.099311jes
160.
MaYAhlbergESunYet al.Thermoelectric characteristics of electrochemically deposited Bi2Te3 and Sb2Te3 thin films of relevance to multilayer preparation. J Electrochem Soc. 2011;159:D50–D58. doi:10.1149/2.033202jes
PuneetPPodilaRKarakayaMet al.Preferential scattering by interfacial charged defects for enhanced thermoelectric performance in few-layered n-type Bi2Te3. Sci Rep-UK. 2013;3:1–7. doi:10.1038/srep03212
163.
LalSGautamDRazeebKM.Optimization of annealing conditions to enhance thermoelectric performance of electrodeposited p-type BiSbTe thin films. Apl Mater. 2019;7:31102–31109. doi:10.1063/1.5049586
164.
HamdouBKimlingJDornAet al.Thermoelectric characterization of bismuth telluride nanowires, synthesized via catalytic growth and post-annealing. Adv Mater. 2013;25:239–244. doi:10.1002/adma.201202474
165.
NishizawaJI.Growth and crystal properties of Ti-doped PbTe crystals grown by Bridgman method under Pb and Te vapor pressure. J Cryst Growth. 2001;222:38–43. doi:10.1016/S0022-0248(00)00875-7
166.
SutoKNishizawaJYasudaA.Calculation of the optimum vapor pressure for stoichiometry in PbTe and PbSnTe. Mat Sci Semicon Proc. 2003;6:289–292. doi:10.1016/j.mssp.2003.08.022
167.
RostekRSklyarenkoVWoiasP.Influence of vapor annealing on the thermoelectric properties of electrodeposited Bi2Te3. J Mater Res. 2011;26:1785–1790. doi:10.1557/jmr.2011.141
168.
MaYWijesekaraWPalmqvistAE.Electrochemical deposition and characterization of thermoelectric ternary (BixSb1–x)2Te3 and Bi2(Te1–ySey)3 thin films. J Electron Mater. 2012;41:1138–1146. doi:10.1007/s11664-011-1790-y
169.
YamamuroHTakashiriM.Power generation in slope-type thin-film thermoelectric generators by the simple contact of a heat source. Coatings. 2019;9:63–71. doi:10.3390/coatings9020063
EguchiRYamamuroHTakashiriM.Enhanced thermoelectric properties of electrodeposited Bi2Te3 thin films using TiN diffusion barrier layer on a stainless-steel substrate and thermal annealing. Thin Solid Films. 2020;714:138356–138312. doi:10.1016/j.tsf.2020.138356
172.
LalSGautamDRazeebKM.The impact of surfactant sodium dodecyl sulfate on the microstructure and thermoelectric properties of p-type (Sb1–xBix)2Te3 electrodeposited films. ECS J Solid State Sci. 2017;6:N3017–N3021. doi:10.1149/2.0041703jss
173.
WangCHsiehHSunZet al.Interfacial stability in Bi2Te3 thermoelectric joints. ACS Appl Mater Inter. 2020;12:27001–27009. doi:10.1021/acsami.9b22853
174.
KoikeJWadaM.Self-forming diffusion barrier layer in Cu–Mn alloy metallization. Appl Phys Lett. 2005;87:041911. doi:10.1063/1.1993759
175.
NicoletMA.Diffusion barriers in thin films. Thin Solid Films. 1978;52:415–443. doi:10.1016/0040-6090(78)90184-0
176.
LiWYanXAberleAGet al.Effect of a TiN alkali diffusion barrier layer on the physical properties of Mo back electrodes for cigs solar cell applications. Curr Appl Phys. 2017;17:1747–1753. doi:10.1016/j.cap.2017.08.021
177.
WooHJLeeWJKohEKet al.Plasma-enhanced atomic layer deposition of TiN thin films as an effective Se diffusion barrier for cigs solar cells. Nanomaterials-Basel. 2021;11:370. doi:10.3390/nano11020370
178.
SatoMKitadaHTakeyamaMB.Characterization of tin films sputter-deposited at low temperatures for Cu-through-silicon via. Jpn J Appl Phys. 2019;58:SBBC03. doi:10.7567/1347-4065/ab01d9
179.
QuZWangWLiXet al.Measurement and error analysis of Cu film thickness with ta barrier layer on wafer for cmp application. IEEE Trans Instrum Meas. 2021;70:1–10. doi:10.1109/TIM.2020.3017057
180.
TsengSCLeeTCTsaiHY.Diffusion effect for the catalytic growth of carbon nanotubes on metal alloys substrate. Diam Relat Mater. 2019;96:112–117. doi:10.1016/j.diamond.2019.04.020
181.
BoulatLViennoisROlivieroEet al.Study of TaN and TaN-Ta-TaN thin films as diffusion barriers in CeFe4Sb12 skutterudite. J Appl Phys. 2019;126:125306. doi:10.1063/1.5105385
182.
XuHHuZJQuXPet al.Effect of thickness scaling on the permeability and thermal stability of Ta(N) diffusion barrier. Appl Surf Sci. 2019;498:143887. doi:10.1016/j.apsusc.2019.143887
183.
HsuKFLooSGuoFet al.Cubic AgPbmSbTe2+m: bulk thermoelectric materials with high figure of merit. Science. 2004;303:818–821. doi:10.1126/science.1092963
184.
WangYZhangJShenZet al.Preparation of Bi2Te3/nano-SiC composite thermoelectric films by electrodeposition. J Electron Mater. 2015;44:2166–2171. doi:10.1007/s11664-015-3747-z
185.
HanXWeiW.Synthesis and characterization of CNTs/Bi2Te3 thermoelectric nanocomposites. Int J Electrochem Sci. 2013;8:6686–6691.
186.
GaynerCAmouyalY.Energy filtering of charge carriers: current trends, challenges, and prospects for thermoelectric materials. Adv Funct Mater. 2020;30:1901789. doi:10.1002/adfm.201901789
187.
YaprintsevMVasil’evAIvanovOet al.Forming the locally-gradient Ni@NiTe2 domains from initial Ni inclusions embedded into thermoelectric Bi2Te3 matrix. Mater Lett. 2021;290:129451. doi:10.1016/j.matlet.2021.129451
188.
KfsaBNhtAToA.Enhancement in thermoelectric performance of electrochemically deposited platinum-bismuth telluride nanocomposite. Electrochim Acta. 2019;312:62–71. doi:10.1016/j.electacta.2019.04.139
189.
EiglerSEnzelberger-HeimMGrimmSet al.Wet chemical synthesis of graphene. Adv Mater. 2013;25:3583–3587. doi:10.1002/adma.201300155
190.
ZongPLiangJZhangPet al.Graphene-based thermoelectrics. ACS Appl Energy Mater. 2020;3:2224–2239. doi:10.1021/acsaem.9b02187
191.
ZongPHanusRDyllaMet al.Skutterudite with graphene-modified grain-boundary complexion enhances zT enabling high-efficiency thermoelectric device. Energy Environ Sci. 2017;10:183–191. doi:10.1039/c6ee02467j
192.
XuHWangW.Electrodeposition of MWNT/Bi2Te3 composite thermoelectric films. J Electron Mater. 2013;42:1936–1945. doi:10.1007/s11664-013-2479-1
PallecchiIPaniMRicciFet al.Thermoelectric properties of chemically substituted full-Heusler Fe2TiSn1–xSbx (x = 0, 0.1, and 0.2) compounds. Phys Rev Mater. 2018;2:075403. doi:10.1103/PhysRevMaterials.2.075403
195.
WangZAkaoTOndaTet al.Formation of Te-rich phase and its effect on microstructure and thermoelectric properties of hot-extruded Bi-Te-Se bulk materials. J Alloy Compd. 2016;684:516–523. doi:10.1016/j.jallcom.2016.05.232
196.
JangJMinBKKimBSet al.Development of p-type Bi2-xSbxTe3 thermoelectric materials for power generation application exploiting synergetic effect of Sb alloying and repress process. Appl Surf Sci. 2020;508:145236–145242. doi:10.1016/j.apsusc.2019.145236
197.
KimHSHeinzNAGibbsZMet al.High thermoelectric performance in (Bi0. 25Sb0. 75)2Te3 due to band convergence and improved by carrier concentration control. Mater Today. 2017;20:452–459. doi:10.1016/j.mattod.2017.02.007
198.
HoriTShiomiJ.Tuning phonon transport spectrum for better thermoelectric materials. Sci Technol Adv Mater. 2019;20:10–25. doi:10.1080/14686996.2018.1548884
SootsmanJChungDKanatzidisM.New and old concepts in thermoelectric materials. Angew Chem Int Edit. 2009;48:8616–8639. doi:10.1002/anie.200900598
201.
LiLXuSLiG.Enhancement of thermoelectric properties in Bi-Sb-Te alloy nanowires by pulsed electrodeposition. Energy Technol-Ger. 2015;3:825–829. doi:10.1002/ente.201500071
202.
LimSKimMOhT.Thermoelectric properties of the bismuth-antimony-telluride and the antimony-telluride films processed by electrodeposition for micro-device applications. Thin Solid Films. 2009;517:4199–4203. doi:10.1016/j.tsf.2009.02.005
KangWSChouWCLiWJet al.Electrodeposition of Bi2Te3-based p and n-type ternary thermoelectric compounds in chloride baths. Thin Solid Films. 2018;660:108–119. doi:10.1016/j.tsf.2018.06.001
205.
LiFWangW.Electrodeposition of BixSb2–xTey thermoelectric thin films from nitric acid and hydrochloric acid systems. Appl Surf Sci. 2009;255:4225–4231. doi:10.1016/j.apsusc.2008.11.013
206.
FengXHangarterCYooBet al.Recent progress in electrodeposition of thermoelectric thin films and nanostructures. Electrochim Acta. 2008;53:8103–8117. doi:10.1016/j.electacta.2008.06.015
207.
ZhangQFangTLiuFet al.Tuning optimum temperature range of Bi2Te3 based thermoelectric materials by defect engineering. Chem-Asian J. 2020;15:2775–2792. doi:10.1002/asia.202000793
208.
FangTLiXHuCet al.Complex band structures and lattice dynamics of Bi2Te3-based compounds and solid solutions. Adv Funct Mater. 2019;29:1900677. doi:10.1002/adfm.201900677
209.
ChenJZhouXUherCet al.Structural modifications and non-monotonic carrier concentration in Bi2Se0.3Te2.7 by reversible electrochemical lithium reactions. Acta Mater. 2013;61:1508–1517. doi:10.1016/j.actamat.2012.11.028
210.
PanYAydemirUSunFHet al.Self-tuning n-type Bi2(Te, Se)3/SiC thermoelectric nanocomposites to realize high performances up to 300°C. Adv Sci. 2017;4:1700259. doi:10.1002/advs.201700259
211.
NolasGSSharpJGoldsmidJ.Thermoelectrics: basic principles and new materials developments. Vol. 45. Springer Science & Business Media; 2001. https://doi.org/10.1007/978-3-662-04569-5
212.
WangWJiYXuHet al.A high packing density micro-thermoelectric power generator based on film thermoelectric materials fabricated by electrodeposition technology. Surf Coat Tech. 2013;231:583–589. doi:10.1016/j.surfcoat.2012.04.048
213.
KaoPHShihPJDaiCLet al.Fabrication and characterization of CMOS-MEMS thermoelectric micro generators. Sensors. 2010;10:1315–1325. doi:10.3390/s100201315
214.
LalSGautamDRazeebKM.Fabrication of micro-thermoelectric cooler for the thermal management of photonic devices. IEEE-NANO. 2018: 1–2. doi:10.1109/NANO.2018.8626304
215.
CorbettSGautamDLalSet al.Electrodeposited thin-film micro-thermoelectric coolers with extreme heat flux handling and microsecond time response. ACS Appl Mater Inter. 2021;13:1773–1782. doi:10.1021/acsami.0c16614
216.
ChungSHKimJTKimHet al.High-temperature Bi2Te3 thermoelectric generator fabricated using Cu nanoparticle paste bonding. J Alloy Compd. 2022;896:163060. doi:10.1016/j.jallcom.2021.163060
217.
JiangCPFanXRongZZet al.Elemental diffusion and service performance of Bi2Te3-based thermoelectric generation modules with flexible connection electrodes. J Electron Mater. 2017;46:1363–1370. doi:10.1007/s11664-016-5135-8
218.
TanMDengYHaoY.Enhanced thermoelectric performance of a highly ordered vertical Bi0.5Sb1.5Te3 pillar array device with optimized interconnect. Sci Adv Mater. 2015;6:1076–1082. doi:10.1166/sam.2015.2151
LalSGautamDRazeebKM.Fabrication of micro-thermoelectric devices for power generation and the thermal management of photonic devices. J Micromech Microeng. 2019;29:065015. doi:10.1088/1361-6439/ab18f1
224.
LiuSHuBLiuDet al.Micro-thermoelectric generators based on through glass pillars with high output voltage enabled by large temperature difference. Appl Energy. 2018;225:600–610. doi:10.1016/j.apenergy.2018.05.056
225.
RothRRostekRCobryKet al.Design and characterization of micro thermoelectric cross-plane generators with electroplated Bi2Te3, SbxTey, and reflow soldering. J Microelectromech Syst. 2014;23:961–971. doi:10.1109/JMEMS.2014.2303198
226.
ZhangWYangJXuD.A high power density micro-thermoelectric generator fabricated by an integrated bottom-up approach. J Microelectromech Syst. 2016;25:744–749. doi:10.1109/JMEMS.2016.2565504
227.
KimMYOhTS.Thermoelectric power generation characteristics of a thin-film device consisting of electrodeposited n-Bi2Te3 and p-Sb2Te3 thin-film legs. J Electron Mater. 2013;42:2752–2757. doi:10.1007/s11664-013-2671-3
228.
NguyenHTNguyenVTTakahitoO.Flexible thermoelectric power generator with Y-type structure using electrochemical deposition process. Appl Energy. 2018;210:467–476. doi:10.1016/j.apenergy.2017.05.005
229.
PelzUJaklinJRostekRet al.Fabrication process for micro thermoelectric generators (μTEGs). J Electron Mater. 2016;45:1502–1507. doi:10.1007/s11664-015-4088-7
230.
TanwarALalSRazeebKM.Structural design optimization of micro-thermoelectric generator for wearable biomedical devices. Energies. 2021;14:2339–2351. doi:10.3390/en14082339
231.
O’DwyerCChenRHeJet al.Scientific and technical challenges in thermal transport and thermoelectric materials and devices. ECS J Solid State Sci Technol. 2017;6:N3058–N3064. doi:10.1149/2.0091703jss
232.
YazawaKShakouriA.Cost-efficiency trade-off and the design of thermoelectric power generators. Environ Sci Technol. 2011;45:7548–7553. doi:10.1021/es2005418
233.
UdaKSekiYSaitoMet al.Fabrication of π-structured Bi–Te thermoelectric micro-device by electrodeposition. Electrochim Acta. 2015;153:515–522. doi:10.1016/j.electacta.2014.12.019
234.
LiGFernandezJGLara RamosDAet al.Integrated microthermoelectric coolers with rapid response time and high device reliability. Nat Electron. 2018;1:555–561. doi:10.1038/s41928-018-0148-3
235.
YounesEChristoffersonJMaizeKet al.Short time transient behavior of SiGe-based microrefrigerators. MRS Proc. 2009;1166:1166–N01–06. doi:10.1557/PROC-1166-N01-06
236.
WangCHHsiehHCLeeHYet al.Co-P diffusion barrier for p-Bi2Te3 thermoelectric material. J Electron Mater. 2019;48:53–57. doi:10.1007/s11664-018-6633-7
237.
CardinalTKwanMBorca-TasciucTet al.Multifold electrical conductance enhancements at metal-bismuth telluride interfaces modified using an organosilane monolayer. ACS Appl Mater Inter. 2017;9:2001–2005. doi:10.1021/acsami.6b12488
