Recent developments have seen breakthroughs in zero-, one-, two-, and three-dimensional AlN micro- and nanostructures, such as nanoparticles, nanowires, nanotubes, thin films and 3D multifold symmetry crystals. The attractive electrical, optical, and thermal properties of AlN make these materials irreplaceable for microelectrochemical systems (MEMS), surface acoustic waves (SAWs) and light emitting diodes (LED). The significant interest in the field of AlN nanostructure synthesis and application encouraged us to summarise the reported data to better understand the physical and chemical aspects of AlN crystal growth processes. Four main topics are covered in this review article: (1) the morphological diversity of AlN nano- and microstructures; (2) formation mechanisms and growth dynamics; (3) theoretical simulation of growth processes based on density functional theory (DFT) and phase field (PF) modelling approaches; (4) application and devices. This article also provides a perspective on future research relevant to AlN micro- and nanostructures.
Get full access to this article
View all access options for this article.
References
1.
HuangYDuanXCuiYGallium nitride nanowire nanodevices. Nano Lett. 2002;7:771–774.
2.
HaberJAGibbonsPCBuhroWE.Morphological control of nanocrystalline aluminium nitride: aluminium chloride-assisted nanowhisker growth. J Am Chem Soc. 1997;119:5455–5456.
3.
YinLWBandoYGolbergDGrowth of single-crystal indium nitride nanotubes and nanowires by a controlled-carbonitridation reaction route. Adv Mater. 2004;16:1833–1838.
4.
TaniyasuYKasuMMakimotoT.Field emission properties of heavily Si-doped AIN in triode-type display structure. Appl Phys Lett. 2004;84:2115–2117.
5.
GrabowskiSPSchneiderMNienhausHElectron affinity of AlxGa1-xN(0001) surfaces. Appl Phys Lett. 2001;78:2503–2205.
6.
SaediLSBozorghiJMaskanatiMThe effect of water on the electronic and field emission properties of inorganic AlN nanocones: computational study. Inorg Chem Commun. 2018;90:86–91.
7.
TangYBCongHTWangZMCatalyst-seeded synthesis and field emission properties of flowerlike Si-doped AlN nanoneedle array. Appl Phys Lett. 2006;89:2004–2007.
8.
KitayamaSKitaTKawamuraMNarrowband ultraviolet field-emission device using Gd-doped AlN. Mater Sci Eng. 2009;1:012001.
9.
AkiyamaMUenoMNonakaKFlexible pulse-wave sensors from oriented aluminium nitride nanocolumns. Appl Phys Lett. 2003;82:1977–1979.
10.
SiwiecJSokolowskaAOlszynaAPhotoluminescence properties of nanocrystalline, wide band gap nitrides (C3N4, BN, AIN, GaN). Nanostruct Mater. 1998;10:625–634.
11.
AriyawansaGRinzanMBMAlevliMGan/AlGaN ultraviolet/infrared dual-band detector. Appl Phys Lett. 2006;89:091113.
12.
LiuYJiangLWangGAdjustable nitrogen-vacancy induced magnetism in AlN. Appl Phys Lett. 2012;100:122401.
13.
SinghMSinghJ.Design of high electron mobility devices with composite nitride channels. J Appl Phys. 2003;94:2498–2506.
YamaguchiSIzakiRKaiwaN.Thermoelectric devices using InN and Al1−xInxN thin films prepared by reactive radio-frequency sputtering. Appl Phys Lett. 2004;84:5344–5346.
16.
MezianiYMMaleyreBSadowskiMLTerahertz investigation of high quality indium nitride epitaxial layers. Phys Status Solidi A. 2005;202:590–592.
MagonoCChungW.Meteorological classification of natural snow crystals. J Fac Sci. Hokkaido Uni. Ser. 7 Geophys. 1996;2:321–335.
19.
LibbrechtKG.The physics of snow crystals. Rep Prog Phys. 2005;68:855.
20.
DemangeGZapolskyHPatteRA phase field model for snow crystal growth in three dimensions. NPJ Comput Mater. 2017;3:0015.
21.
SelvadurayGSheetL.Aluminium nitride: review of synthesis methods. Mater Sci Technol. 1993;9:463–473.
22.
PathakLCRayAKDasSCarbothermal synthesis of nanocrystalline aluminium nitride powders. J Am Ceram Soc. 1999;82:257–260.
23.
HashimotoNYodenHDekiS.Sintering behavior of fine aluminium nitride powder synthesized from aluminium polynuclear complexes. J Am Ceram Soc. 1992;75:2098–2106.
24.
WegLHuangDJiangX.Synthesis of aluminium nitride from aluminium citrate precursor. Mater Lett. 1993;18:159–162.
25.
StanleyDRBirchallJDHylandJNKCarbothermal synthesis of binary (MX) and ternary (M1,M2X) carbides, nitrides and borides from polymeric precursors. J Mater Chem. 1992;2:149–156.
26.
JungWSAhnSK.Preparation of aluminium nitride powder from hydroxo)(succinato)aluminium(iii) complex. J Mater Chem. 1994;4:949–953.
27.
AhnSKOhCWJungWS.Conversion of succinate-and adipate-coordinated Al(III) complexes to AlN in N2 and NH3 atmospheres. J Korean Ceram Soc. 1996;33:455–463.
28.
JungWSAhnSK.Synthesis of aluminium nitride by a modified carbothermal reduction and nitridation method using basic dicarboxylate Al(III) complexes Al(OH)(Cn+2H2nO4)·xH2O (n = 3, 6, 8). J Europ Ceram Soc. 2001;21:79–85.
29.
IdeTKomeyaKMeguroTSynthesis of AlN powder by carbothermal reduction-nitridation of various Al2O3 powders with CaF2. J Am Ceram Soc. 1999;98:2993–2998.
30.
MolisaniALYoshimuraHN.Low-temperature synthesis of AlN powder with multicomponent additive systems by carbothermal reduction-nitridation method. Mater Res Bull. 2010;45:733–738.
31.
Qin MDLi XXSynthesis of aluminum nitride powder by carbothermal reduction of a combustion synthesis precursor. Mater. Res. Bull. 2008;43:2954–2960.
32.
LeeSHYiJHKimJHPreparation of nanometer AlN powders by combining spray pyrolysis with carbothermal reduction and nitridation. Ceram Int. 2011;37:1967–1971.
33.
TanakaTVauganA.Tailoring of nanocomposite dielectrics: from fundamenals to devices and applications. New York: Science; 2018.
34.
MandilasCDaskalosEKaragiannakisGSynthesis of aluminium nanoparticles by arc plasma spray under atmospheric pressure. Mater Sci Eng B. 2013;178:22–30.
35.
IwataMAdachiKFurukawaS.Synthesis of purified AlN nano powder by transferred type arc plasma. J Phys D: Appl Phys. 2004;37:1041–1047.
36.
RautVBSeth TTPawarAULarge-scale synthesis of nanopowders by transferred arc thermal plasma. Int J Nanotechnol. 2010;7:9–12.
37.
KimTHChoiSParkDW.Effects of NH3 flow rate on the thermal plasma synthesis of AlN nanoparticles. J Korean Phys Soc. 2013;63:1864–1870.
38.
KimKIChoiSCKimJHSynthesis and characterization of high-purity aluminium nitride nanopowder by RF induction thermal plasma. Ceram Int. 2014;40:8117–8123.
39.
GrigoriuCHiraiMNishiuraKSynthesis of nanosized aluminium nitride powders by pulsed laser ablation. J Am Ceram Soc. 2000;83:2631–2633.
40.
JohnstonGPMuenchausenRESmithDSReactive laser ablation synthesis of nanosize aluminium nitride. J Am Ceram Soc. 1992;75:3465–3468.
41.
NersisyanHHYooBULeeKHA thermochemical pathway for controlled synthesis of AlN nanoparticles in non-isothermal conditions. Thermochim Acta. 2015;604:77–82.
42.
NersisyanHHYooBULeeTHCombustion based synthesis of AlN nanoparticles using a solid nitrogen promotion reaction. J Am Ceram Soc. 2015;98:3740–3747.
43.
AmosovAPBichurovGVKondratLANitride nanopowders by azide SHS technology. Int J SHS. 2017;26:11–21.
44.
TitovaVSholomovaAKuzinaAAzide SHS of aluminium nitride nanopowder and its application for obtaining Al-Cu-AlN cast nanocomposite. Mater Sci Eng. 2016;156:012037.
45.
ZhangQGaoL.Synthesis of nanocrystalline aluminium nitride by nitridation of delta-Al2O3 nanoparticles in flowing ammonia. J Am Ceram Soc. 2006;89:415–421.
46.
PanchulaMLYingJY.Nanocrystalline aluminium nitride: I, vapor-phase synthesis in a forced-flow reactor. J Am Ceram Soc. 2003;86:1114–1120.
47.
TokoiYSuzukiTNakayamaTSynthesis of aluminium nitride nanopowder with particle size less than 10 nm by pulsed wire discharge in nitrogen gas. Jpn J Appl Phys. 2010;49:1–6.
48.
ChoCKinemuchiYSuematsuYEnhancement of nitridation in synthesis of aluminium nitride nanosize powders by pulsed wire discharge. Jpn J Appl Phys. 2003;42:1763–1765.
49.
SanguraiCKinemuchiYSuzukiTSynthesis of nanosize powders of aluminium nitride by pulsed wire discharge. Jpn J Appl Phys. 2001;40:1070–1072.
50.
KinemuchiYMuraiKSanguraiCNanosize powders of aluminium nitride synthesized by pulsed wire discharge. J Am Ceram Soc. 2003;86:420–424.
51.
ChaundhuriMG.Feasibility study of synthesis of nanostructured aluminium nitride through sol-gel route. Int J Eng Res Appl. 2016;6:20–22.
52.
LiuZWangWYangDIn situ synthesis of AlN nanoparticles by solid state reaction from plasma assisted ball milling Al and diaminomaleonitrile mixture. Ceram Int. 2016;42:3411–3417.
53.
LeeTHNersisyanHHJeongHGEfficient synthesis route to quasi-aligned and high-aspect-ratio aluminium nitride micro- and nanostructures. Chem Eng J. 2011;174:461–466.
RadwanMMiyamotoY.Growth of quasi-aligned AlN nanofibers by nitriding combustion synthesis. J Am Ceram Soc. 2007;90:2347–2351.
56.
ShiZRadwanMKiriharaSFormation and evolution of quasi-aligned AlN nanowhiskers by combustion synthesis. J Alloy Compd. 2009;476:360–365.
57.
ShiZRadwanMKiriharaSMorphology-controlled synthesis of quasi-aligned AlN nanowhiskers by combustion method: effect of NH4Cl additive. Ceram Int. 2009;35:2727–2733.
58.
LeeKAhnDKimY.Aluminium nitride whisker formation during combustion synthesis. J Am Ceram Soc. 2000;83:1117–1121.
59.
NiuJSuzukiSYiXFabrication of AlN particles and whiskers via salt-assisted combustion synthesis. Ceram Int. 2015;41:4438–4443.
60.
ShiZZhaoCWangHHCombustion synthesis of AlN nanowhiskers with different metallic catalysts. Mater Lett. 2014;128:156–159.
61.
JiangGZhuangHZhangJMorphologies and growth mechanisms of aluminium nitride whiskers by SHS method – part I. J Mater Sci. 2000;35:2735–2741.
62.
JiangGZhuangHZhangJMorphologies and growth mechanisms of aluminium nitride whiskers by SHS method – part 2. J Mater Sci. 2000;35:2735–2741.
63.
LeiMYangHLiPGSynthesis and characterization of straight and stacked-sheet AlN nanowires with high purity. J Alloys Compd. 2008;459:338–342.
64.
ShenLHLiXFZhangJSynthesis of single-crystalline wurtzite aluminium nitride nanowires by direct arc discharge. Appl Phys A. 2006;84:73–75.
65.
MatsumotoMSaitouHTakeuchiYMorphology of AlN whiskers grown by reacting N2 gas and Al vapor. J Cryst Growth. 2017;468:576–580.
66.
RadwanMBahgatM.A modified direct nitridation method for formation of nano-AlN whiskers. J Mater Process Technol. 2007;181:99–105.
67.
MashhadiMMearajiFTamizifarM.The effects of NH4Cl addition and particle size of Al powder in AlN whiskers synthesis by direct nitridation. Int J Refract Met Hard Mater. 2014;46:181–187.
68.
PaulRKLeeKHLeeBTFormation of AlN nanowires using Al powder. Mater Chem Phys. 2008;112:562–565.
69.
ZhangPGWangKYLiangJFormation of hexagonal AlN nanotowers and layered nanorods by direct nitridation of aluminium. Physica E. 2011;43:934–937.
70.
LvHChenGYeHSynthesis of monocrystal aluminium nitride nanowires at low temperature. J Appl Phys. 2007;101:053526.
71.
WuCYangQHuangCFacile solvent-free synthesis of pure-phased AlN nanowhiskers at a low temperature. J Solid State Chem. 2004;177:3522–3528.
72.
WangHLiuGYangWBicrystal AlN zigzag nanowires. J Phys Chem C. 2007;111:17169–17172.
73.
YuLLvYZhangXVapor-liquid-solid growth route to AlN nanowires on Au-coated Si substrate by direct nitridation of Al powder. J Cryst Growth. 2011;334:57–61.
74.
TangYCongHWangZSynthesis of rectangular cross-section AlN nanofibers by chemical vapor deposition. Chem Phys Lett. 2005;416:171–175.
75.
TangHCongHChenZAn array of Eiffel-tower-shape AlN nanotips and its field emission properties. Appl Phys Lett. 2005;86:1–3.
76.
ZhaoQXuJXuXYField emission from AlN nanoneedle arrays. Appl Phys Lett. 2004;85:5331–5333.
77.
LiuCHuZWuQVapor-solid growth and characterization of aluminium nitride nanocones. J Am Chem Soc. 2005;127:1318–1322.
78.
ShiSCChenCFChattopadhyaySGrowth of single-crystalline wurtzite aluminium nitride nanotips with a self-selective apex angle. Adv Funct Mater. 2005;15:781–786.
79.
ShiSCChenCFChattopadhyaySField emission from quasi-aligned aluminium nitride nanotips. Appl Phys Lett. 2005;87:073109.
80.
ChiouJWTsaiHMPaoCWComparison of the electronic structures of AlN nanotips grown on p-and n-type Si substrates. J Phys; Condens Matter. 2005;17:7523–7530.
81.
YuLLiuNHeCIn-situ chloride-generated route to different AlN nanostructures on Si substrate. J Phys Chem C. 2009;113:14245–14248.
82.
ZhangYLiuJHeRSynthesis of aluminium nitride nanowires from carbon nanotubes. Chem Mater. 2001;13:3899–3905.
83.
ZhaoQZhangHXuXOptical properties of highly ordered AlN nanowire arrays grown on sapphire substrate. Appl Phys Lett. 2005;86:193101.
84.
WuHMLiangJY.Synthesis and luminescence properties of AlN nanowires. Ferroelectrics. 2009;383:95–101.
85.
WuHMLiangJYLinKLCatalyst-assisted growth of AlN nanowires. Ferroelectrics. 2009;383:73–77.
86.
WuHMLiangJY.Catalytic growth and characterization of single-crystalline aluminium nitride nanowires. In Proceedings of the INEC 2010 3rd International Nanoelectronics Conference; 2010, January 3-8; City University of Hong Kong.
87.
WangQZhaoSConnieAT.Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates. Appl Phys Lett. 2014;104:1–5.
88.
WangQNguyenHPTCuiKHigh efficiency ultraviolet emission from Alx Ga1−x N core-shell nanowire heterostructures grown on Si (111) by molecular beam epitaxy. Appl Phys Lett. 2012;101:043115.
89.
ZhaoSConnieATDastjerdiMHTAluminium nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources. Sci Rep. 2014;5:8332.
90.
MiyauchiMIshikawaYShibataN.Growth of aluminium nitride films on silicon by electron-cyclotron-resonance-assisted molecular beam epitaxy. Jpn J Appl Phys. 1992;31:L1714–L1717.
91.
YanxiongEHaoZYuJMBE growth of AlN nanowires on Si substrates by aluminizing nucleation. Nanoscale Res Lett. 2015;10:383.
92.
LandréOFellmannVJaffrennouPMolecular beam epitaxy growth and optical properties of AlN nanowires. Appl Phys Lett. 2010;96:061912.
93.
ZhangDZhangRQ.Theoretical prediction on aluminium nitride nanotubes. Chem Phys Lett. 2003;371:426–432.
94.
WuQHuZWangZSynthesis and characterization of faceted hexagonal aluminium nitride nanotubes. J Am Chem Soc. 2003;125:10176–10177.
95.
TondareVNBalasubramanianCShendeSVField emission from open ended aluminium nitride nanotubes. Appl Phys Lett. 2002;80:4813–4815.
YinLWBando ZhuYCSingle-crystalline AIN nanotubes with carbon-layer coatings on the outer and inner surfaces via a multiwalled-carbon-nanotube-template-induced route. Adv Mater. 2005;17:213–217.
98.
WuQHuZWangXSynthesis and optical characterization of aluminium nitride nanobelts. J Phys Chem B. 2003;107:9726–9729.
99.
LiHBWuRLiJGrowth of AlN nanobelts, nanorings and branched nanostructures. J Alloys Compd. 2011;509:2111–2115.
100.
TangYCongHLiFSynthesis and photoluminescent property of AlN nanobelt array. Diamond & Related Mater. 2007;16:537–541.
101.
NersisyanHHLeeSHChoiJHSingle-step combustion process for the synthesis of 1-D, 2-D, and 3-D hierarchically grown AlN structures. Combust Flame. 2017;185:210–219.
102.
TangYBCongHTChengHM.Field emission from honeycomblike network of vertically aligned AIN nanoplatelets. Appl Phys Lett. 2006;89:093113.
MortetVVasinAJouanPYAluminium nitride films deposition by reactive triode sputtering for surface acoustic wave device applications. Surf Coat Tech. 2003;176:88–92.
105.
BelyaninABouilovLZhirnovVApplication of aluminium nitride films for electronic devices. Diam Relat Mater. 1999;8:369–372.
106.
JangKLeeKKimJEffect of rapid thermal annealing of sputtered aluminium nitride film in an oxygen ambient. Mater Sci Semicond Process. 2006;9:1137–1141.
107.
DingKAvrutinVOzgurUStatus of growth of group III-nitride heterostructures for deep ultraviolet light-emitting diodes. Crystals (Basel). 2017;7:300, (1-22).
108.
XiYAChenKXMontFOptimization of high-quality AlN epitaxially grown on (0001) sapphire by metal-organic vapor-phase epitaxy. J Electron Mater. 2007;36:533–537.
109.
KayaKKannoYTakahashiHSynthesis of AlN thin films on sapphire substrates by chemical vapor deposition of AlCl3–NH3 system and surface acoustic wave properties. Japanes J Appl Phys. 1996;35:2782–2787.
110.
VerardiPDinescuMStanciuCA parametric study of AlN thin films grown by pulsed laser deposition. Mat Sci Eng. 1997;50:223–227.
111.
HullavaeadSSVisputeRDNagarajBAdvances in pulsed-laser-deposited AlN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications. J Electron Mater. 2006;35:777–794.
112.
KipshidzeGNikishinSKuryatkovVHigh quality AlN and GaN grown on compliant Si/SiC substrates by gas source molecular epitaxy. J Elect Mat. 2001;30:825–828.
113.
OkanoHTakahashiYTanakaTPreparation of c-axis oriented AlN thin films by low-temperature reactive sputtering. Japanese J Appl Phys. 1992;31:3446–3451.
114.
HuTLMaoSWChaoCPDeposition characteristics of AlN thin film prepared by the dual ion beam sputtering system. J Electron Mater. 2007;36:81–87.
115.
IshiharaMYumotoHTsuchiyaTEffect of bias voltage on AlN thin films prepared by electron shower method. Thin Solid Films. 1996;281–282:321–323.
116.
XiongJGuHSWuWSynthesis of c-axis inclined AIN films in an off-center system for shear wave devices. J Electron Mater. 2011;40:1578–1583.
117.
LeeJBJungJPLeeMHEffects of bottom electrodes on the orientation of AlN films and the frequency responses of resonators in AlN-based FBARs. Thin Solid Films. 2004;447–448:610–614.
118.
ChoS.Effect of nitrogen flow ratio on the structural and optical properties of aluminium nitride thin films. J Cryst Growth. 2011;326:179–182.
119.
ChengHELinTCChenWC.Preparation of [002] oriented AlN thin films by mid frequency reactive sputtering technique. Thin Solid Films. 2003;425:85–89.
120.
WangCChiuMCShiaoMHCharacterization of AlN thin films prepared by unbalanced magnetron sputtering. J Electrochem. Soc. 2004;151:F252–F256.
121.
KamberDCWuYHaskellBADirect heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy. J Cryst Growth. 2006;297:321–325.
122.
SoukhoveevVVolkovaAIvanstovVLarge area GaN and AlN template substrates fabricated by HVPE. Phys Status Solidi C. 2009;6:S333–S335.
123.
TajimaJTogashiHKumagaiYControl of in-plane epitaxial relationship of c -plane AlN layers grown on a -plane sapphire substrates by hydride vapor phase epitaxy. Phys Status Solidi C. 2011;8:2028–2030.
124.
BakerTMayoAVeisiZHydride vapor phase epitaxy of AlN using a high temperature hot-wall reactor. J. Cryst Growth. 2014;403:29–31.
125.
KinoshitaTHironakaKObataTDeep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy. Appl Phys Express. 2012;5:122101.
126.
MaYHuoKWuQSelf-templated synthesis of polycrystalline hollow aluminium nitride nanospheres. J Mater Chem. 2006;16:2834–2838.
127.
ZhangFWuQXiaoPSynthesis of A1N hollow nanospheres via an in situ generated template method. J Phys Chem C. 2008;112:11331–11335.
128.
ShiZYangWKangYSynthesis of AlN porous-shell hollow spheres by a combustion route. Ceram Int. 2013;39:4663–4667.
FanZWuQWangX6-Fold-symmetrical AlN hierarchical nanostructures: synthesis and field-emission properties. J Phys Chem C. 2009;113:4053–4058.
132.
GuoLChenGZhuYThe growth of sea-urchin-like AlN nanostructures by modified CVD and their field emission properties. J Cryst Growth. 2015;426:49–53.
133.
LeiWLiuDZhangJDirect synthesis, growth mechanism, and optical properties of 3D AlN nanostructures with urchin shapes. Cryst Growth Des. 2009;9:1489–1493.
134.
LeiWLiuDZhuPOne-step synthesis of AlN branched nanostructures by an improved DC arc discharge plasma method. CrystEngComm. 2010;12:511–516.
135.
CimallaVFoersterCCengherDGrowth of AIN nanowires by metal organic chemical vapour deposition. Phys Stat Solidi (B). 2006;243:1476–1480.
136.
ShenLLvWWangNControllable synthesis of AlN nanostructures and their photoluminescence. CrystEngComm. 2017;19:5940–5945.
137.
NersisyanHHLeeSHChoiJHTailoring the morphology of AlN: from 6-fold patterned crystals to multilayer hierarchical structures. CrystEngComm. 2017;19:4441–4447.
138.
NersisyanHHKimDYooBExperimental growth of new 6-fold symmetry patterned microcrystals of AlN: equilibrium structures and growth mechanism. Cryst Growth Des. 2016;16:5305–5311.
139.
NersisyanHHLeeJHDingJRCombustion synthesis of zero-, one-, two-and three- dimensional nanostructures: current trends and future perspectives. Prog. Energy Combust Sci. 2017;63:79–118.
140.
NersisyanHHLeeSHYooBUThe growth of AlN dendritic crystals with uniform morphology by an aluminium microdroplet localization approach. Combust Flame. 2018;196:26–34.
141.
YangSLGaoRSNiuPLArc discharge synthesis and photoluminescence of 3D feather-like AlN nanostructures. Nanoscale Res Lett. 2011;6:1–6.
142.
KenryYKYuSF.Aln nanowires: synthesis, physical properties, and nanoelectronics applications. J Mater Sci. 2012;47:5341–5360.
YazdiGRPerssonPOGogovaD.Aligned AlN nanowires by self-organized vapor-solid growth. Nanotechnol. 2009;20:495304.
145.
ShenLLiXCuiQFormation and growth mechanism of ripple-like AlN nanowires. Applied Physics A: Mater Sci Process. 2010;99:111–115.
146.
HerroZGZhuangDSchlesserRSeeded growth of AlN on N- and Al-polar 〈0001〉 AlN seeds by physical vapor transport. J Cryst Growth. 2006;286:205–208.
147.
LeiMSongBGuoXLarge-scale AlN nanowires synthesized by direct sublimation method. J Ceram Soc. 2009;29:195–200.
148.
ZhangXHShaoRWJinLHelical growth of aluminium nitride: New insights into its growth habit from nanostructures to single crystals. Sci Rep. 2015;5:1–12.
149.
JiXLiHWuZGrowth of AlN hexagonal oriented complex nanostructures induced by nucleus arrangement. CrystEngComm. 2011;13:5198–5203.
150.
LiuTZhangJSuXNucleation and growth of (101-1) semi-polar AlN on (0001) AlN by hydride vapor phase epitaxy. Sci Rep. 2016;6:26040.
151.
MollNKleyAPehlkeAGaas equilibrium crystal shape from first principles. Phys Rev B. 1996;54:8844–8855.
152.
RottmanCWortisM.Statistical mechanics of equilibrium crystal shapes: interfacial phase diagrams and phase transitions. Phys Rep. 1984;103:59–79.
153.
WuQHuZWangXExtended vapor-liquid-solid growth and field emission properties of aluminium nitride nanowires. J Mater Chem. 2003;13:2024–2027.
154.
HeCWangXWuQPhase-equilibrium-dominated vapor–liquid–solid growth. J. Am. Chem. Soc. 2010;132:4843–4847.
155.
CuiHSunYWangCX.Unusual growth direction and controllable wettability of W-catalyzed AlN nanowires. CrystEngComm. 2013;15:5376–5381.
156.
LiuFSuJMoFYControlled synthesis of ultra-long AlN nanowires in different densities and in situ investigation of the physical properties of an individual AlN nanowire. Nanoscale. 2011;3:610–618.
157.
DangTMLYoonDHKimCY.Synthesis of AlN whiskers using cobalt oxide catalyst and their alignments for the improvement of thermal conductivity. Mater Chem Phys. 2016;179:204–213.
158.
BrienVMiskaPBolleBColumnar growth of AlN by r.f. magnetron sputtering: role of the {101¯3} planes. J Cryst Growth. 2007;307:245–252.
159.
HaxhimaliTKarmaAGonzalesFOrientation selection in dendritic evolution. Nat Mater. 2006;5:660–664.
160.
ZhaoMXiaYZhangDStability and electronic structure of AlN nanotubes. Phys Rev B – Condens Matter Mater Phys. 2003;68:7–10.
161.
ZhaoMXiaYTanZStrain energy and thermal stability of single-walled aluminium nitride nanotubes from first-principles calculations. Chem Phys Lett. 2004;389:160–164.
162.
ChenXMaJHuZAIN nanotube: Round or faceted?J Am Chem Soc. 2005;127:7982–7983.
163.
ZhaoMXiaYLiuXFirst-principles calculations of AlN nanowires and nanotubes: atomic structures, energetics, and surface states. J Phys Chem B. 2006;110:8764–8768.
164.
WuYChenGYeHOrigin of the phase transition of AlN, GaN, and ZnO nanowires. App Phys Lett. 2009;94:1–4.
165.
WangYRyuSMcIntyrePCA three-dimensional phase field model for nanowire growth by the vapor-liquid-solid mechanism. Modell Simul Mater Sci Eng. 2014;22:5777–5785.
166.
CollinsJBLevineH.Diffuse interface model of diffusion-limited crystal growth. Phys Rev B. 1985;31:6119–6122.
167.
KobayashiR.Modeling and numerical simulations of dendritic crystal growth. Physica D. 1993;63:410–423.
168.
SlavovVDimovaSIlievO.Phase-field method for 2D dendritic growth. In: Lirkov I, Margenov S, Waśniewski J, Yalamov P, editors. Proceedings of the 4th Int Conference on Large-Scale Scientific Computing; LSSC 2003 June 4–8, Sozopol, Bulgaria: Springer-Verlag Berlin, Germany.
169.
KloedenPEPlatenE.Numerical solution of stochastic differential equations, applications of mathematics. Berlin: Springer-Verlag; 1992.
170.
ShahAHaiderAShahSK.Numerical simulation of two-dimensional dendritic growth using phase-field model. World J Mechanics. 2014;04:128–136.
171.
XuYMcDonoughJMTagaviKA.A numerical procedure for solving 2D phase-field model problems. J Comput Phy. 2006;218:770–793.
172.
SanalR.Numerical simulation of dendritic crystal growth using phase field method and investigating the effects of different physical parameter on the growth of the dendrite. Arxiv:1412.3197 [math. NA].
173.
NersisyanHHKimWBLeeSHControl and teoretical modeling of the growth process of AlN six-fold and multifold armed dendritic crystals. Cryst Growth Des. 2019;19:3244–3252.
174.
KobayashiR.A numerical approach to three-dimensional dendritic solidification. Exp Math. 1994;3:59–81.
175.
ChenCCTsaiYLLanCW.Adaptive phase field simulation of dendritic crystal growth in a forced flow: 2D vs 3D morphologies. Int J Heat Mass Trans. 2009;52:1158–1166.
176.
SakaneSTakakiTOhnoMGPU-accelerated 3D phase-field simulations of dendrite competitive growth during directional solidification of binary alloy. IOP Conf. Series: Mater Sci Eng. 2015;84:012063.
177.
TaniyasuYKasuMMakimotoT.An aluminium nitride light-emitting diode with a wavelength of 210 nanometres. Nature. 2006;441:325.
178.
BerzinaBTrinklerLGrabisJPhotoluminescence in AlN: macro-size and micro-size powder. Phys. Stat. Sol. C. 2007;3:959–962.
179.
PandyaSGKordeschME.Erbium doped aluminium nitride nanoparticles for nano-thermometer applications. Mater Res Exp. 2015;2:065006.
180.
DongMShenLPWangHOil-based AlN nanofluid. J. Nanomater. 2013: 1–7.
181.
LiuDZhouYYangYCharacterization of high performance AIN nanoparticle-based transformer oil nanofluids. IEEE Trans Electr Insul. 2016;23:2757–2767.
182.
YuHLiLKidoTThermal and insulating properties of epoxy/aluminium nitride composites used for thermal interface material. J. Appl. Polym. Sci. 2012;124:669–677.
183.
MiZZhaoSWooSY.Molecular beam epitaxial growth and characterisation of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers. J Phys D: Appl Phys. 2016;49:364006.
184.
ZhaoSDjavidMMiZ.A surface emitting, high efficiency near-vacuum ultraviolet light source with aluminium nitride nanowires monolithically grown on silicon. Nano Lett. 2015;15:7005–7009.
185.
ConnieATZhaoSSadafSMOptical and electrical properties of Mg-doped AlN nanowires grown by molecular beem epitaxy. Appl. Phys. Lett. 2015;106:213105.
186.
CarnevaleSDKentTFPhillipsPJPolarization-induced Pn diodes in wide-band-gap nanowires with ultraviolet electroluminescence. Nano Lett. 2012;12:915–920.
187.
InoueSTamariNTanigushiM.150 mW deep-ultraviolet light-emitting diodes with large-area AlN nanophotonic light-extraction structure emitting at 265 nm. Appl Phys Lett. 2017;110:141106.
188.
KentTFCarnevaleSDSarwarADDeep ultraviolet emitting polarization induced nanowire light emitting diodes with AlxGa(1-X)N active regions. Nanotechnol. 2014;25:455201.
189.
TangXLiGZhouS.Ultraviolet electroluminescence of light-emitting diodes based on N-Zno/P-AlGaN heterojunction nanowires. Nano Lett. 2013;13:5046.
190.
WangQConnieATNguyenHPHighly efficient, spectrally pure 340 nm ultraviolet emission from AlxGa1-xN nanowire based light emitting diodes. Nanotechnol. 2013;24:345201.
191.
ZhaoSLiuXWuYAn electrically pumped 239 nm AlGaN nanowire laser operating at room temperature. Appl. Phys. Lett. 2016;109:191106.
192.
ZhaoSWooSYBugnetM.Three-dimensional quantum confinement of charge carriers in self-organized AlGaN nanowires: a viable route to electrically injected deep ultraviolet lasers, Nano Lett. 2015;15:7801.
193.
RiguttiLTchernychevaMBugalloADLGan/AlN quantum disc single-nanowire photodetectors. Phys Status Solidi A. 2010;207:1323–1327.
194.
RiguttiLTchernychevaMBugalloADLUltraviolet photodetector based on GaN/AlN quantum disks in a single nanowire. Nano Lett. 2010;10:2939–2943.
195.
LiYXiangJQianFDopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors. Nano Lett. 2006;6:1468–1473.
196.
LähnemannJAjayAHertogMIDNear-infrared intersubband photodetection in GaN/AlN nanowires. Nano Lett. 2017;17:6954–6960.
197.
FathololoumiSZhaoSNguyenHPTLarge Area GaN/AlN nanowire resonant tunneling devices on silicon. In proceedings of the Conference on Lasers and Electro-Optics; 2012, May 1-6, 2012; San Jose, CA. Osa Publishing: 2012. p. CTh3D.7.
198.
LiKHLiuXWangQUltralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperatures. Nat. Nanotechnol. 2015;10:140.
199.
SakaiMInoseYEmaKRandom laser action in GaN nanocolumns. Appl. Phys. Lett. 2010;97:151109.
200.
XueYYaoBLiuDRoom temperature ferromagnetism in new diluted magnetic semiconductor AlN:Mg nanowires. CrystEngComm. 2013;15:3271–3276.
201.
FanclerC.Aluminium nitride thin films. deposition for fabrication, characterization and fabrication of surface acoustic wave devices. Saarbrücken: VDM Verlag Dr. Miller Aktiengesellscharft &co. KG; 2008.
202.
FuYCherngJSLuoJKAluminium nitride thin film acoustic wave device for microfluidic and biosensing applications. In: DissanayakoDW, editor. Acoustic waves. Croatia: Sciyo; 2010. p. 263–298.
203.
GerfersFKohlstandtPMGinsburgESputtered AlN thin films for piezoelectric MEMS devices-FBAR resonators and accelerometers. In: SwartJW, editor. Solid state circuits technologies. Croatia: INTECH; 2010. p. 333–338.
204.
MuraltP.AlN thin film processing and basic properties. In: BhugraHPiazzaG, editors. Piezoelectric MEMS resonators. Basel: Springer International Publishing; 2017. p. 3–37.
205.
ZhangMYangJSiCResearch on the piezoelectric properties of AlN thin films for MEMS applications. Micromashines. 2015;6:1236–1248.
206.
ShuLPengBLiCThe characterization of surface acoustic wave devices based on AlN-metal structures. Sensors. 2016;16:526.
207.
FujiiS.High-frequency surface acoustic wave filter based on diamond thin film. Phys Status Solidi A. 2011;208:1072–1077.
208.
SoltaniATalibiAGerbedoenJCHigh performance AlN-based surface acoustic wave sensors on TiN on (100) Silicon substrate. Proceedings of the Global Symposium on millimeter-waves (GSMM); 2015 May 25–27; Monreal, Canada: IEEE; 2015.
209.
YokoyamaTIwazakiYOndaYHighly piezoelectric Co-doped AlN thin films for wideband FBAR applications. EEE Trans Ultrason Ferroelectr Freq Control. 2015;62:1007–1015.
NeffBCassetFMilletADevelopment of a MEMS plate based on thin-film piezoelectric AlN actuators for biological applications. Proc AMIA Annu Fall Symp. 2017;1:386.
213.
AbelsCMastronardiVMGuidoFNitride-based materials for flexible MEMS tactile and flow sensors in robotics. Sensors. 2017;17:1080.
