Effect of annealing temperature on properties of WS 2 thin films

Abstract

In this paper, the influences of different annealing temperature from 200 to 500°C with an interval of 100°C on the properties of WS₂ thin films deposited onto the Si substrates and glass substrates prepared through RF magnetron sputtering were investigated. The optical and electrical properties were tested using Ultraviolet Spectrophotometer and Hall Tester, respectively. The results show that the properties of WS₂ thin films did not change linearly with temperature, WS₂ thin films obtained the optimal electron mobility of 1.69 × 10³ cm²/Vs, the optimal bulk carrier concentration of 1.28 × 10¹⁸ cm⁻³, the smallest band gap of 1.5 eV, and the smallest resistivity of 5.77 × 10⁻² Ω⁻¹·cm⁻¹ at 400°C. Moreover, the S/W was close to the ideal WS₂ stoichiometric of 2.