TiNx films were deposited using direct current reactive magnetron sputtering on glass substrates, and the variation of resistivity and infrared emissivity of TiNx films deposited at different substrate temperatures was investigated. The N/Ti ratios of prepared films were off-stoichiometric, and reached the highest value 0.97 at 350°C. The results showed that substrate temperature had an important role in regulating the resistivity and infrared emissivity of TiNx films, and the change in resistivity of the films was consistent with their infrared emissivity. As the substrate temperature increased from 25 to 350°C, the resistivity of the films decreased from 15.7 × 103 to 0.9 × 103 μΩ cm. Infrared emissivity in the wavelength of 3–5 μm decreased from 0.55 to 0.29, and the value in the wavelength of 8–14 μm dropped from 0.54 to 0.27.
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