Indentation techniques were utilised to induce deformation on polar (0001) c-plane and non-polar m-plane GaN single crystal. Cracking was more sensitively dependent on the orientation of the indenter tip, compared to hardness. The indentation-induced plastic deformation and fracture sequences were studied by cathodoluminescence imaging and optical microscopy, respectively. Polar GaN was harder than non-polar, while pop-in discontinuities occurred at lower loads in polar than non-polar GaN. Dislocation arrangements were more isotropic at the polar than the non-polar orientation. Polar GaN was more susceptible to cracking compared to non-polar. Indentation at the high load regime fostered radial and lateral crack formation at both indenter orientations in polar GaN. Post-indentation lateral crack propagation was observed in situ in polar GaN.
This is part of a thematic issue on Nanoscale Materials Characterisation and Modeling by Advances Microscopy Methods - EUROMAT.
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m-plane GaN single crystal. Cracking was more sensitively dependent on the orientation of the indenter tip, compared to hardness. The indentation-induced plastic deformation and fracture sequences were studied by cathodoluminescence imaging and optical microscopy, respectively. Polar GaN was harder than non-polar, while pop-in discontinuities occurred at lower loads in polar than non-polar GaN. Dislocation arrangements were more isotropic at the polar than the non-polar orientation. Polar GaN was more susceptible to cracking compared to non-polar. Indentation at the high load regime fostered radial and lateral crack formation at both indenter orientations in polar GaN. Post-indentation lateral crack propagation was observed in situ in polar GaN.