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Select article: Damage Process of Polycrystalline LSI Conductor Due to Atom Migration Induced by Electric Current and Stress

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Research article

First published April, 2002

Damage Process of Polycrystalline LSI Conductor Due to Atom Migration Induced by Electric Current and Stress

Tadahiro Shibutani, Takayuki Kitamura, Futoshi Kawamura

International Journal of Damage Mechanics

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